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| 型號： | SX15GD2 |
| 英文描述： | Fast Recovery Rectifier Diodes |
| 中文描述： | DRUCKSENSOR |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 122K |
| 代理商： | SX15GD2 |
SX - Series
PRESSURE SENSORS
March 1998/052
Aubinger Weg 27, 82178 Puchheim, Germany
Phone 0049 - (0) 89 80 08 30, Fax 0049 - (0) 89 8 00 83 33
http://www.sensortechnics.com
( ) ( )
67.7 mV
R1
a)
VB=
α
(VS + IO
R2)
(1 -
α
)+ 1-
α
b)
=
c)
α
=
d)
= 3360 ppm/°C,
IO RB
IO
RB
=+750ppm/°C
e)
IO =
The design steps are straight forward:
1) Knowing VS and the desired bridge
voltage VB, solve equation (b) for
α
.
2) Now, solve equation (c) for R2,
letting RB = 4650
.
3) Solve equation (a) for IO.
4) Find R1 or its nearest 1% tolerance
value from equation (e).
Table II gives specific 1% resistor values in
ohms, for several popular system voltages.
For best results, the resistors should be
1% metal film with a low temperature
coefficient.
Table II. Selected R Values vs VS for
Figure IV
VS
5V
6V
9V
12V
15V
VB
3V
4V
6V
9V
10V
R1(
)
147
105
68.1
43.2
41.2
R2(
)
11.0k
9.53k
9.53k
8.25k
9.53k
Amplifier Design
There are hundreds of instrumentation
amplifier designs, and the intent here will
be to briefly describe one circuit which:
does not load the bridge
involves minimal components
provides excellent performance
Amplifier Adjustment Procedure
1.Without pressure applied,
(a) Short points A and B together as
shown in Figure V. Adjust the 1k
common-mode rejection (CMRR)
pot until the voltage at test point (Tp)
Vx is equal to the voltage at test
point (Tp) VR.
This is easily accomplished by
placing a digital voltmeter between
these test points and adjusting for
0.000.
RB
R2 + RB
)
a) VB=VS-4
φ
b) VB
φ
VB
VS
φ
c)
= -2500 ppm/°C for silicon diodes
Figure II. Equations
For example, solving equation (b) for VB/
VB when
VS = 6.0 V
φ
= 0.7 V
Yields:
= 2188 ppm/°C
Since the sensor’s span changes with
temperature at -2150 ppm/°C, this technique
will typically result in an overall negative
TC of 38 ppm/C. This error is acceptable in
most applications.
For operation with VS above 6V, it is
recommended to use the transistor or
constant current compensation technique.
2. Transistor Compensation
Network
Figure III uses a single transistor to
simulate a diode string, with the equations
as shown. The values shown in Table I
were found to give excellent results over
0°C to 70°C. Again, if precision temperature
compensation is required for each device,
the fixed value resistors shown for R1 in
Table I can be replaced by a 3.24k resistor
in series with a 1k pot. Then, each devices
temperature compensation can be
individually adjusted.
Figure III. Transistor/Resistor
Span TC Compensation
-4
( )
φ
( )
φ
φ
=
VB
a) VB
=
VS -
α
φ
( )
b)
x
-
α
φ
c)
α
=
1
+
d)
φ
φ
Table I. Selected R Values vs VS for
Figure III
R1 (
)
5V
3.32k
9V
4.02k
12V
4.22k
VS
R2 (
)
1.43k
806
604
3.
(Figure IV)
The circuits shown in Figures II and III,
although simple and inexpensive, have one
drawback in that the voltage across the
bridge is determined by the compensations
network. That is, the compensation network
is determined and what voltage is “l(fā)eftover"
is across the bridge. The circuit of Figure IV
solves this problem and allows the bridge
voltage to be independently selected. In
Figure IV, the bridge is driven from a constant
current source, the LM334, which has a
very well known and repeatable
temperature coefficient of +3300 ppm/°C.
This temperature coefficient (TC), in
conjunction with the TC of the bridge resis-
tance, is too high to compensate the
sensitivity TC, hence resistor R2 is added
to reduce the total circuit TC.
The basic design steps for this method
of temperature compensation are shown
below. However, please refer to SenSym’s
Application Note SSAN-16 for details on the
temperature compensation technique.
Constant Current Excitation
Figure IV. Constant Current Span TC
Compensation
( ) ( )
VB
φ
α
VS
R1
R2
=
-2500 ppm/°C
APPLICATION INFORMATION (cont.)
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