參數(shù)資料
型號(hào)： SYS321000LK-020
英文描述： x32 SRAM Module
中文描述： X32號(hào)的SRAM模塊
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 206K
代理商： SYS321000LK-020
ISSUE 1.5 : December 1998
SYS321000ZK/LK - 012/015/20/25
2
Parameter
Symbol Test Condition
Min Typ
max
Unit
I/P Leakage Current
Address,OE,WE
I
LI
I
LO
I
CC1
I
SB1
I
SB2
V
OL
V
OH
0V < V
IN
< V
CC
CS = V
IH,
V
I/O
= GND to V
CC
Min. Cycle, CS = V
IL
,V
IL
<V
IN
<V
IH
CS = V
IH
CS
>
V
CC
-0.2V, 0.2<V
IN
<V
CC
-0.2V
I
OL
= 8.0mA
I
OH
= -4.0mA
-16
-
16
μA
Output Leakage Current
Worst Case
-16
-
16
μA
Average Supply Current
-
-
1360
mA
Standby Supply Current
TTL
-
-
480
mA
CMOS
-
-
80
mA
Output Voltage
-
-
0.4
V
2.4
-
-
V
Typical values are at V
CC
=5.0V,T
A
=25
o
C and specified loading. CS above refers to CS1~4.
Voltage on any pin relative to V
SS
Power Dissipation
Storage Temperature
V
T
P
T
T
STG
(2)
-0.3
-
-55
-
-
-
7.0
8.0
125
V
W
o
C
Notes :
(1)
Stresses above those listed may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at those or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
V
T
can be -2.0V pulse of less than 10ns.
(2)
DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Absolute Maximum Ratings
(1)
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
V
CC
V
IH
V
IL
T
A
T
AI
4.5
2.2
-0.3
0
-40
5.0
-
-
-
-
5.5
V
V
V
V
CC
+0.3
0.8
70
85
(Commercial)
o
C
(Industrial)
o
C
Capacitance
(V
CC
=5V±10%,T
A
=25
o
C)
Note: Capacitance calculated, not measured.
Parameter
Symbol Test Condition
max
Unit
Input Capacitance
(Address,OE,WE)
I/P Capacitance
(other)
I/O Capacitance
C
IN1
C
IN2
C
I/O
V
IN
= 0V
V
IN
= 0V
V
I/O
= 0V
64
10
80
pF
pF
pF
DC Electrical Characteristics
(V
CC
=5V±10%)
T
A
0 to 70
o
C
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