參數(shù)資料
型號: SYS81000RKX-10
元件分類: SRAM
英文描述: 1M X 8 MULTI DEVICE SRAM MODULE, 100 ns, PSMA35
封裝: PLASTIC, MODULE, SIP-35
文件頁數(shù): 1/2頁
文件大?。?/td> 444K
代理商: SYS81000RKX-10
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
No Connect
Power (+5V)
A0 - A19
D0 - D7
CS
WE
OE
NC
V
CC
GND
Ground
Package Details
Block Diagram
Pin Functions
Pin Definition
Description
Features
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Issue 1.2 : May 1996
SYS81000RKX-70/85/10/12
1M x 8 SRAM MODULE
Access Times of 70/85/100/120 ns.
35 Pin Single-In-Line (SIL) package.
5 Volt Supply ± 10%.
Low Power Standby
-L Version
Low Power Operation
Completely Static Operation.
Equal Access and Cycle Times.
All Inputs and Outputs Directly TTL compatible
Low Voltage V
CC
Data Retention.
On-board decoding & capacitors.
Battery back-up capability.
80uW (typ).
140mW (typ).
The SYS81000RKX is plastic 8M Static RAM
Module housed in a 35 pin Single-In-Line package,
organised as 1M x 8.
The module utilises fast SRAMs housed in SOP
packages, and uses double sided surface mount
techniques on an FR4 epoxy substrate, to achieve
a very high density module.
The SYS81000RKX is offered in standard and low
power versions, with the -L module having a low
voltage data retention mode for battery backed
applications.
Plastic 35 Pin Single-in-line (SIL)
128K x 8
SRAM
128K x 8
SRAM
A0 - A16
D0 - D7
WE
OE
A17
A18
A19
CS
DECODER
CS
CS
CS
CS
CS
CS
CS
CS
Vcc
A0
A1
A2
A3
D0
D1
A4
A5
A6
A7
A8
A13
D2
CS
A15
A16
A17
A9
GND
OE
A14
D3
D4
D5
WE
A10
A11
A12
D6
D7
GND
A18
A19
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES
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