參數(shù)資料
型號(hào): SYS82000RKXDL-12
英文描述: 2M x 8 SRAM MODULE
中文描述: 200萬(wàn)× 8的SRAM模塊
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 104K
代理商: SYS82000RKXDL-12
A0~A18
/OE
/WE
/CS
A19
A20
D0~7
512K x 8
SRAM
512K x 8
SRAM
Decoder
/CS
/CS
512K x 8
SRAM
/CS
512K x 8
SRAM
/CS
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
No Connect
Power (+5V)
A0 - A20
D0 - D7
CS
WE
OE
NC
V
CC
GND
Ground
Package Details
SYS82000RKXD - 85/10/12
Block Diagram
Pin Functions
Pin Definition
Description
The SYS82000RKXD is a plastic 16Mbit Static
RAM Module housed in a standard 36 pin Single-In-
Line package organised as 2M x 8. This offers an
extremely high PCB packing density.
Features
Issue 1.4 : April 2001
2M x 8 SRAM MODULE
Access Times of 85/100/120ns.
36 Pin Industry Standard Single-In-Line package.
5 Volt Supply ± 10% .
Power Dissipation :
Operating (min cycle)
Standby -L Version (CMOS)
Completely Static Operation.
Equal Access and Cycle Times.
Low Voltage V
CC
Data Retention.
Directly TTL Compatible.
On-board Decoding & Capacitors.
Compatible with the SYS8512RKX, SYS81000RKXB
and SYS82000RKX modules.
610 mW (max).
2.2 mW (max).
The module is constructed using four 512Kx8
SRAMs in TSOPII packages mounted on a FR4
epoxy substrate. Access times are 85, 100 and
120ns.
The SYS82000RKXD is offered in standard and low
power versions, with the -L module having a low
voltage data retention mode for battery backed
applications.
Plastic 36 Pin Single-In-Line (SIP)
A20
Vcc
WE
D2
D3
D0
A1
A2
A3
A4
GND
D5
A10
A11
A5
A13
A14
A19
CS
A15
A16
A12
A18
A6
D1
GND
A0
A7
A8
A9
D7
D4
D6
A17
Vcc
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
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SYS82000RKXDL-85 制造商:MOSAIC 制造商全稱:MOSAIC 功能描述:2M x 8 SRAM MODULE
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SYS8256RKX-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM Module