SYS8512RKX-70/85/10/12 ISSUE 1.0 March 1999
2
DC OPERATING CONDITIONS
Absolute Maximum Ratings
(1)
Recommended Operating Conditions
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Storage Temperature
Notes :
(1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at those or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
(2)V
t
can be -3.5V pulse of less than 20ns.
Symbol
V
T
P
T
T
STG
min
-0.5
-
-55
typ
-
1
-
max
+7
-
+150
unit
V
W
o
C
Parameter
Symbol
min
typ
max
unit
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
V
CC
V
IH
V
IL
T
A
T
AI
4.5
2.2
-0.3
0
-40
5.0
-
-
-
-
5.5
6.0
0.8
70
85
V
V
V
o
C
o
C
(L)
DC Electrical Characteristics
(V
CC
=5V±10%)
T
A
0 to 70
O
C
Parameter
Symbol Test Condition
min
typ
(2)
max Unit
I/P Leakage Current
A0~A16, OE
I
LI1
0V - V
IN
- V
CC
-
-
±8
μA
Output Leakage Current
D0~D7
I
LO
CS = V
IH,
V
I/O
= GND to V
CC
-
-
±8
μA
Operating Supply Current
I
CC
CS = V
IL
,I
I/O
= 0mA,V
IL
-V
IN
-V
CC
-2.1V
-
16
44 mA
Average Supply Current
TTL evels
I
CC1
Min. Cycle, CS = V
IL
, V
IN
= V
IL
/V
CC
-2.1V
-
70
110 mA
CMOS levels
I
CC2
Min. Cycle, CS - 0.2V, V
IN
= 0.2V/V
CC
-0.2V
-
24
40 mA
Standby Supply Current TTL evels
I
SB
CS = V
CC
-2.1V, V
IL
- V
IN
- V
CC
-2.1V
-
5
12 mA
CMOS levels
I
SB1
CS = V
CC
-0.2V, 0.2 - V
IN
- V
CC
-0.2V
-
0.2
8
mA
-L Part
I
SB2
As above
-
10
500 μA
Output Voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
V
OH
I
OH
= -1.0mA
2.4
-
-
V
Typical values are at V
CC
=5.0V,T
A
=25
o
C and specified loading.