參數(shù)資料
型號: SYS8512RKXLI-10
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: x8的SRAM模塊
文件頁數(shù): 3/7頁
文件大小: 120K
代理商: SYS8512RKXLI-10
SYS8512RKX-70/85/10/12 ISSUE 1.0 March 1999
3
CS
OE
WE
DATA PINS
SUPPLY CURRENT
MODE
H
X
X
High Impedance
I
SB1
, I
SB2
Standby
L
L
H
Data Out
I
CC1
, I
CC2
I
CC1
, I
CC2
Read
L
L
L
Data In
Write
L
H
L
Data In
I
CC1
, I
CC2
Write
Notes : H = V
IH
: L =V
IL
: X = V
IH
or V
IL
* Input pulse levels: 0V to 3.0V
* Input rise and fall times: 5ns
* Input and Output timing reference levels: 1.5V
* Output load: see diagram
* V
CC
=5V±10%
AC Test Conditions
Output Load
-L Part
Parameter
Symbol
Test Condition
min
typ
(1)
max
Unit
V
CC
for Data Retention
Data Retention Current
V
DR
CS - V
CC
-0.2V
2.0
-
-
V
V
CC
= 3.0V, CS = V
CC
-0.2V
I
CCDR1
I
CCDR2
I
CCDR3
(2)
T
OP
= 0°C to 40°C
-
9
100
μA
T
OP
= 0C to 70C
-
9
200
μA
T
OP
= T
AI
-
-
280
μA
Chip Deselect to
Data Retention Time
t
CDR
t
R
See Retention Waveform
0
-
-
ns
Operation Recovery Time
See Retention Waveform
5
-
-
ms
Notes (1) Typical figures are measured at 25°C.
(2) This parameter is guaranteed not tested.
Parameter
Symbol
Test Condition
max
Unit
Input Capacitance (CS, A17, A18)
I/P Capacitance (other)
I/O Capacitance
C
IN1
C
IN2
C
I/O
V
IN
= 0V
V
IN
= 0V
V
I/O
= 0V
8
32
40
pF
pF
pF
Capacitance
(V
CC
=5V±10%,T
A
=25
o
C)
Note: Capacitance calculated, not measured.
Operation Truth Table
Low V
cc
Data Retention Characteristics - L Version Only
645
100pF
I/O Pin
1.76V
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