參數(shù)資料
型號: SYS8512RKXLI-70
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: x8的SRAM模塊
文件頁數(shù): 4/7頁
文件大小: 120K
代理商: SYS8512RKXLI-70
SYS8512RKX-70/85/10/12 ISSUE 1.0 March 1999
4
AC OPERATING CONDITIONS
Read Cycle
-70
-85
-10
-12
Parameter
Symbol
min
max
min
max
min
max
min
max
Unit
Read Cycle Time
t
RC
t
AA
t
ACS
t
OE
t
OH
70
-
85
-
100
-
120
-
ns
Address Access Time
-
70
-
85
-
100
-
120
ns
Chip Select Access Time
-
70
-
85
-
100
-
120
ns
Output Enable to Output Valid
-
40
-
45
-
50
-
55
ns
Output Hold from Address Change
10
-
10
-
10
-
10
-
ns
Chip Selection to Output in Low Z
t
CLZ
t
OLZ
t
CHZ
t
OHZ
10
-
10
-
10
-
10
-
ns
Output Enable to Output in Low Z
5
-
5
-
5
-
5
-
ns
Chip Deselection to O/P in High Z
0
30
0
30
0
35
0
40
ns
Output Disable to Output in High Z
0
30
0
30
0
35
0
40
ns
-70
-85
-10
-12
Parameter
Symbol
min
max
min
max
min
max
min
max
Unit
Write Cycle Time
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
70
-
85
-
100
-
120
-
ns
Chip Selection to End of Write
60
-
75
-
80
-
100
-
ns
Address Setup Time
0
-
0
-
0
-
0
-
ns
Address Valid to End of Write
60
-
75
-
80
-
100
-
ns
Write Pulse Width
55
-
65
-
70
-
80
-
ns
Write Recovery Time
5
-
5
-
5
-
5
-
ns
Write to Output in High Z
t
WHZ
t
DW
t
DH
t
OW
0
25
0
30
0
35
0
40
ns
Data to Write Time Overlap
30
-
35
-
40
-
45
-
ns
Data Hold from Write Time
0
-
0
-
0
-
0
-
ns
Output active from end of write
5
-
5
-
5
-
5
-
ns
Write Cycle
* 70 ns not available at industrial temperature
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