參數(shù)資料
型號: T1235H
廠商: 意法半導(dǎo)體
英文描述: 12A TRIACS
中文描述: 第12A雙向可控硅
文件頁數(shù): 4/7頁
文件大小: 94K
代理商: T1235H
T1235H Series
4/7
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:
Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I2t.
Fig. 7:
On-state characteristics (maximum
values).
Fig. 8:
Relative variation of critical rate of
decrease of main current versus junction
temperature (typical values).
Fig. 9:
Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
-40
-20
0
20
40
60
80
100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
Tj(°C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
1
10
100
1000
0
25
50
75
100
125
150
Number of cycles
ITSM(A)
Non repetitive
Tj initial=25°C
Repetitive
Tc=135°C
One cycle
t=20ms
0.01
0.10
1.00
10.00
100
1000
2000
tp(ms)
ITSM(A),I2t(A2s)
Tj initial=25°C
ITSM
I2t
dI/dt limitation:
50A/μs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
200
VTM(V)
ITM(A)
Tj=25°C
Tj max.
Vto = 0.80 V
Rd = 25 m
Tj max.
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
Tj(°C)
(dI/dt)c [Tj] / (dI/dt)c [Tj=150°C]
0.1
1.0
10.0
100.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
(dV/dt)c (V/μs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
相關(guān)PDF資料
PDF描述
T1235H-600G 12A TRIACS
T1235H-600G-TR 12A TRIACS
T1235H-600T 12A TRIACS
T1235H-600TRG 12A TRIACS
T12xxxH Standard Triacs(標(biāo)準(zhǔn)雙向可控硅)
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