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參數(shù)資料
| 型號(hào)： | T15M256B-70DG |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 32K X 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 32K的× 8低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 5/13頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | T15M256B-70DG |
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TE
CH
tm
AC CHARACTERISTICS
(
Vcc
= 5V /
± 10%
, Vss = 0V, Ta =
0 ~ +70
°
C/
-40 to 85
°
C)
(1) READ CYCLE
T15M256B
TM Technology Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: OCT. 2003
Revision:C
-45ns
-50ns
-70ns
-85ns
-100ns
PARAMETER
SYM.
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
45
-
50
-
70
UNIT
Read Cycle Time
t
RC
t
AA
t
ACS
t
AOE
t
CLZ*
t
OLZ*
t
CHZ*
-
85
-
100
-
ns
Address Access Time
-
45
-
50
-
70
-
85
-
100
ns
Chip Select Access Time
-
45
-
50
-
70
-
85
-
100
ns
Output Enable to Output Valid
-
22
-
25
-
35
-
40
-
50
ns
Chip Selection to Output in Low Z
7
-
7
-
10
-
10
-
10
-
ns
Output Enable to Output in Low Z
5
-
5
-
5
-
5
-
5
-
ns
Chip Deselection to Output in High
Z
Output Disable to Output in High Z
t
OHZ*
Output Hold from Address Change
t
OH
-
15
-
20
-
25
-
30
-
30
ns
-
15
-
20
-
25
-
30
-
30
ns
10
-
10
-
10
-
10
-
10
-
ns
* These parameters is measured with 5pF test load.
(2)WRITE CYCLE
-45ns
-50ns
-70ns
-85ns
-100ns
PARAMETER
SYM.
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
45
-
50
-
70
UNIT
Write Cycle Time
t
WC
t
CW
t
AW
-
85
-
100
-
ns
Chip Selection to End of Write
35
-
40
-
60
-
70
-
80
-
ns
Address Valid to End of Write
35
-
40
-
60
-
70
-
80
-
ns
Address Setup Time
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ*
t
OW
0
-
0
-
0
-
0
-
0
-
ns
Write Pulse Width
25
-
30
-
50
-
60
-
70
-
ns
Write Recovery Time
0
-
0
-
0
-
0
-
0
-
ns
Data Valid to End of Write
22
-
25
-
30
-
35
-
40
-
ns
Data Hold from End of Write
0
-
0
-
0
-
0
-
0
-
ns
Write to Output in High Z
-
15
-
20
-
25
-
30
-
30
ns
Output Active from End of Write
5
-
5
-
5
-
5
-
5
-
ns
* These parameters is measured with 30pF test load.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T15M256B | 32K X 8 LOW POWER CMOS STATIC RAM |
| T15M256B-70D | 32K X 8 LOW POWER CMOS STATIC RAM |
| T15M256B-70DI | 32K X 8 LOW POWER CMOS STATIC RAM |
| T15M256B-70J | 32K X 8 LOW POWER CMOS STATIC RAM |
| T15M256B-70JI | 32K X 8 LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T15M256B-70DI | 制造商:TMT 制造商全稱:TMT 功能描述:32K X 8 LOW POWER CMOS STATIC RAM |
| T15M256B-70J | 制造商:TMT 制造商全稱:TMT 功能描述:32K X 8 LOW POWER CMOS STATIC RAM |
| T15M256B-70JI | 制造商:TMT 制造商全稱:TMT 功能描述:32K X 8 LOW POWER CMOS STATIC RAM |
| T15M256B-70N | 制造商:TMT 制造商全稱:TMT 功能描述:32K X 8 LOW POWER CMOS STATIC RAM |
| T15M256B-70NI | 制造商:TMT 制造商全稱:TMT 功能描述:32K X 8 LOW POWER CMOS STATIC RAM |
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