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參數(shù)資料
| 型號： | T15M256B-85R |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 32K X 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 32K的× 8低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 87K |
| 代理商： | T15M256B-85R |
TE
CH
tm
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
T15M256B
TM Technology Inc. reserves the right
P. 3
to change products or specifications without notice.
Publication Date: MAY. 2002
Revision:A
PARAMETER
RATING
-0.5 to + 7V
-0.5 to Vcc +0.5
0.7
-60 to +150
UNIT
V
V
W
°
C
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
Vcc
V
IL
V
IH
T
A
MIN
4.5
-0.3
2.2
0/-40
TYP
5
-
-
-
MAX
5.5
0.8
Vcc+0.3
+70/+85
UNIT
V
V
V
°
C
TRUTH TABLE
CS
H
L
L
OE
X
H
L
WE
X
H
H
MODE
Not Selected
Output Disable
Read
I/O1- I/O8
High-Z
High-Z
Data Out
Power
Standby
Active
Active
Active
L
X
L
Write
Data In
OPERATING CHARACTERISTICS
(Vcc = 5V /
± 10%
, Vss = 0V, Ta =
0 ~ +70
°
C
/-40 to 85
°
C)
PARAMETER
Input Leakage Current
SYM.
I
LI
TEST CONDITIONS
Vin=Vss to Vcc
V
I/O
=Vss to Vcc ,
CS
=
V
IH
or
OE
=
V
IH
or
WE
=
V
IL
I
OL
= + 2.1mA
I
OH
= - 1.0mA
CS
=
V
IL
, I/O=0mA
Cycle = MIN.
Duty = 100%
MIN. TYP. MAX. UNIT
-
-
1
uA
Output Leakage Current
I
LO
-
-
1
uA
Output Low Voltage
Output High Voltage
V
OL
V
OH
-
-
-
-
-
-
-
0.4
-
35
30
25
20
V
V
mA
mA
mA
mA
2.4
-
-
-
-
-50
-70
-85
-100
Operating Power
Supply Current
Icc
I
SB
I
SB1
CS
=
V
IH
, Cycle=min, Duty=100%
CS
≥
Vcc
-0.2V
-
-
0.3
mA
Standby Power
Supply Current
-
-
10
uA
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