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參數(shù)資料
| 型號： | T15N1M16A-70J |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 64K X 16 LOW POWER CMOS STATIC RAM |
| 中文描述： | 64K的× 16低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 102K |
| 代理商： | T15N1M16A-70J |
TE
CH
tm
OPERATING CHARACTERISTICS
(Vcc =
+2.4 to 3.6V
,
V
SS
= 0V, Ta = 0
°
C to +70
°
C / -40
°
C to +85
°
C)
T15N1M16A
TM Technology Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: JUL . 2002
Revision: A
-55
-70
-100
PARAMETER SYM. TEST CONDITIONS
Min
Max
Min
Max
Min
Min
UNIT
Input Leakage
Current
I
LI
Vcc = Max,
VIN = V
SS
to Vcc
CE
= VIH
or
OE
= VIH
or
WE
= VIL
VIO = V
SS
to Vcc
CE
= VIL,
VIN = VIH or VIL,
IOUT=0mA
Cycle time=min,
100% duty
CE
=
V
IH
or
LB
=
UB
=
V
IH
other input= VIL or
V
IH
CE
≥
Vcc-0.2V or
LB
=
UB
≥
Vcc-0.2V,
VIN
≤
0.2V or
VIN
≥
Vcc-0.2V
I
OL
= 2.1mA
-1
1
-1
1
-1
1
uA
Output Leakage
Current
I
LO
-1
1
-1
1
-1
1
uA
Operating Power
Supply Current
I
CC
-
30
-
25
-
20
mA
Standby Power
Supply Current
(TTL Level)
I
SB
-
0.3
-
0.3
-
0.3
mA
Standby Power
Supply Current
(CMOS Level)
I
SB1
-
10
-
10
-
10
uA
Output Low
Voltage
Output High
Voltage
V
OL
-
0.4
-
0.4
-
0.4
V
V
OH
I
OH
= -1 mA
2.2
-
2.2
-
2.2
-
V
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|---|---|
| T15N1M16A-70JI | 64K X 16 LOW POWER CMOS STATIC RAM |
| T15N1M16A-70S | 64K X 16 LOW POWER CMOS STATIC RAM |
| T15N1M16A-70SI | 64K X 16 LOW POWER CMOS STATIC RAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| T15N1M16A-70JI | 制造商:TMT 制造商全稱:TMT 功能描述:64K X 16 LOW POWER CMOS STATIC RAM |
| T15N1M16A-70S | 制造商:TMT 制造商全稱:TMT 功能描述:64K X 16 LOW POWER CMOS STATIC RAM |
| T15N1M16A-70SI | 制造商:TMT 制造商全稱:TMT 功能描述:64K X 16 LOW POWER CMOS STATIC RAM |
| T15N2 | 制造商:EDAL 制造商全稱:EDAL 功能描述:T10A1 |
| T15N3 | 制造商:EDAL 制造商全稱:EDAL 功能描述:T10A1 |
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