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參數(shù)資料
| 型號(hào)： | T2535-xxxG-TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 25A TRIACS |
| 中文描述： | 25A條雙向可控硅 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | T2535-XXXG-TR |
BTA/BTB24, BTA25, BTA26 and T25 Series
2/9
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise specified)
I
SNUBBERLESS
(3 Quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
I
STANDARD (4 Quadrants): BTA25...B, BTA26...B
Symbol
Test Conditions
STATIC CHARACTERISTICS
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Quadrant
T25
BTA/BTB
Unit
T2535
CW
BW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
V
D
= 12 V
R
L
= 33
I - II - III
MAX.
35
35
50
mA
I - II - III
MAX.
1.3
V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
R
L
= 3.3 k
Tj = 125
°
C
I - II - III
MIN.
0.2
V
MAX.
50
50
75
mA
I - III
II
MAX.
70
80
70
80
80
100
mA
dV/dt (2)
V
D
= 67 % V
DRM
gate open
(dI/dt)c (2) Without snubber
Tj = 125
°
C
Tj = 125
°
C
MIN.
500
500
1000
V/
μ
s
A/ms
MIN.
13
13
22
Quadrant
Value
Unit
I
GT
(1)
V
D
= 12 V
R
L
= 33
I - II - III
IV
MAX.
50
100
mA
V
GT
V
GD
I
H
(2)
I
L
ALL
MAX.
1.3
V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
R
L
= 3.3 k
Tj = 125
°
C
ALL
MIN.
0.2
V
MAX.
80
mA
I - III - IV
II
MAX.
70
160
mA
dV/dt (2)
V
D
= 67 % V
DRM
gate open Tj = 125
°
C
(dV/dt)c (2) (dI/dt)c = 13.3 A/ms
MIN.
500
V/
μ
s
V/
μ
s
Tj = 125
°
C
MIN.
10
Symbol
Test Conditions
Value
Unit
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 35 A
tp= 380
μ
s
Tj = 25
°
C
MAX.
1.55
V
Threshold voltage
Tj = 125
°
C
Tj = 125
°
C
Tj = 25
°
C
Tj = 125
°
C
MAX.
0.85
V
Dynamic resistance
MAX.
16
m
μ
A
V
DRM
= V
RRM
MAX.
5
3
mA
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