參數(shù)資料
型號(hào): T410-700WTR
廠商: 意法半導(dǎo)體
英文描述: 4A TRIACS
中文描述: 第4A雙向可控硅
文件頁數(shù): 5/8頁
文件大小: 118K
代理商: T410-700WTR
T4 Series
5/8
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I2t.
Fig. 7:
On-state characteristics (maximum
values).
Fig. 8:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10:
DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35μm).
0.01
0.10
1.00
10.00
1
10
100
500
tp (ms)
ITSM (A), I2t (A2s)
Tj initial=25°C
ITSM
I2t
dI/d50A/μs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1.0
10.0
30.0
ITM(A)
Tj max.:
Vto= 0.90V
Rd= 120 m
Tj=Tj max.
VTM(V)
0.1
1.0
10.0
100.0
0.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T435
T410
T405
(dV/dt)c (V/μs)
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj(°C)
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
90
100
Rth(j-a) (°C/W)
DPAK
S(cm2)
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