參數(shù)資料
型號: T436416C-7S
廠商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM
文件頁數(shù): 10/28頁
文件大小: 651K
代理商: T436416C-7S
TE
CH
tm
MODE REGISTER
Register Programmed with MRS
Address
A13~A12
T436416C
TM Technology Inc. reserves the right
P.10
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
A11~A10/AP
A9
RF
U
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
RFU
RFU
TM
CAS Latency
BT
Burst Length
Test Mode
A7
0
Mode Register Set
1
Reserved
0
Reserved
1
Reserved
CAS Latency
A5
A4
0
0
0
1
1
0
1
1
0
0
0
1
1
0
1
1
Burst Type
A3
0
Sequential
1
Interleave
Burst Length
A0
0
1
0
1
0
Reserved
1
Reserved
0
Reserved
1
Full Page
A8
0
0
1
1
Type
A6
0
0
0
0
1
1
1
1
Latency
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
Type
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
BT=0
1
2
4
8
BT=1
1
2
4
8
Reserved
Reserved
Reserved
Reserved
Full Page Length : 256
Note : 1. RFU (reserved for future use) should stay “0” during MRS cycle.
2. Test mode use A7~A8, vendor specific options use A9, A10~A11 and A12~A13.
A7~A8, A10 /AP~A11 and A12~A13 must be set to low for normal SDRAM operation.
Refer to the table for specific codes for various burst length, burst type and CAS latencies.
Mode Register Write Timing
C L O C K
C K E
C S
R A S
C A S
W E
A 0 -A 1 3
相關(guān)PDF資料
PDF描述
T436416C-7SG 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5C 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T436416C-7SG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5C 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5CG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5S 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM