參數(shù)資料
型號(hào): T436416D-6C
廠商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM
文件頁數(shù): 16/73頁
文件大?。?/td> 734K
代理商: T436416D-6C
TE
CH
tm
Absolute Maximum Rating
T436416D
TM Technology Inc. reserves the right
P. 16
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
A
T
STG
T
SOLDER
P
D
I
OUT
Item
- 5/6/7
- 5G/6G/7G
Unit Note
V
V
°
C
°
C
°
C
W
mA
Input, Output Voltage
Power Supply Voltage
Ambient Temperature
Storage Temperature
Soldering Temperature (10 second)
Power Dissipation
Short Circuit Output Current
- 1.0 ~ 4.6
-1.0 ~ 4.6
0 ~ 70
- 55 ~ 125
1
1
1
1
1
1
1
245
260
1
50
Recommended D.C. Operating Conditions (T
A
= 0~70
°
C)
Symbol
V
DD
V
DDQ
V
IH
V
IL
Parameter
Power Supply Voltage
Power Supply Voltage(for I/O Buffer)
LVTTL Input High Voltage
LVTTL Input Low Voltage
Min.
3.0
3.0
2.0
- 0.3
Typ.
3.3
3.3
-
-
Max.
3.6
3.6
4.6
0.8
Unit
V
V
V
V
Note
2
2
2
2
Capacitance (V
DD
= 3.3V, f = 1MHz, Ta = 25
°
C)
Symbol
C
I
C
I/O
Parameter
Min.
2
4
Max.
5
6.5
Unit
pF
pF
Input Capacitance
Input/Output Capacitance
Note: These parameters are periodically sampled and are not 100% tested.
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T436416D-6CG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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T436416D-7C 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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