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參數(shù)資料
| 型號： | T436432B-6S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| 中文描述： | 200萬× 32內存為512k × 32 x 4Banks同步DRAM |
| 文件頁數(shù)： | 17/72頁 |
| 文件大?。?/td> | 731K |
| 代理商： | T436432B-6S |
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TE
CH
tm
Recommended D.C. Operating Conditions (V
DD
= 3.3V
±
0.3V, Ta = 0~70°C)
Description/Test condition
Operating Current
t
RC
≥
t
RC
(min), Outputs Open, Input
signal one transition per one cycle
Precharge Standby Current in power down mode
t
CK
= 15ns, CKE
≤
V
IL
(max)
Precharge Standby Current in power down mode
t
CK
=
∞
, CKE
≤
V
IL
(max)
Precharge Standby Current in non-power down mode
t
CK
= 15ns, CS#
≥
V
IH
(min), CKE
≥
V
IH
Input signals are changed once during 30ns.
Precharge Standby Current in non-power down mode
t
CK
=
∞
, CLK
≤
V
IL
(max), CKE
≥
V
IH
Active Standby Current in power down mode
CKE
≤
V
IL
(max), t
CK
= 15ns
Active Standby Current in power down mode
CKE & CLK
≤
V
IL
(max), t
CK
=
∞
Active Standby Current in non-power down mode
CKE
≥
V
IH
(min), CS#
≥
V
IH
(min), t
CK
= 15ns
Active Standby Current in non-power down mode
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CK
=
∞
Operating Current (Burst mode)
t
CK
=t
CK
(min),
Outputs Open, Multi-bank interleave
Refresh Current
t
RC
≥
T
rC
(min)
Self Refresh Current
CKE
≤
0.2V
Parameter
Description
T436432B
TM Technology Inc. reserves the right
P. 17
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
- 5/5.5/6/7/8/10
Max.
Symbol
Unit
Note
1 bank
operation
I
CC1
200/190/180/155/135/120
3
I
CC2P
3
3
I
CC2PS
3
I
CC2N
25
3
I
CC2NS
15
I
CC3P
5
mA
3
I
CC3PS
5
3
I
CC3N
40
I
CC3NS
30
I
CC4
225/215//200/180/150/130
3, 4
I
CC5
260/240/220/210/190/180
3
I
CC6
2
Min.
Max.
Unit
Note
I
IL
Input Leakage Current
( 0V
V
IN
V
DD
, All other pins not under test = 0V )
LVTTL Output "H" Level Voltage
( I
OUT
= -2mA )
LVTTL Output "L" Level Voltage
( I
OUT
= 2mA )
- 1.5
1.5
uA
V
OH
2.4
-
V
V
OL
-
0.4
V
相關PDF資料 |
PDF描述 |
|---|---|
| T436432B-6SG | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-7S | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-7SG | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-8S | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-8SG | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| T436432B-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-7S | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-7SG | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-8S | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-8SG | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
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