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參數(shù)資料
| 型號： | T436432B |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| 中文描述： | 200萬× 32內(nèi)存為512k × 32 x 4Banks同步DRAM |
| 文件頁數(shù)： | 1/72頁 |
| 文件大小： | 731K |
| 代理商： | T436432B |
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TE
CH
tm
SDRAM
FEATURES
3.3V power supply
Clock cycle time : 5 / 5.5 / 6 / 7 / 8 / 10 ns
Internal four banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
Burst Read Single-bit Write operation
DQM for masking
Auto refresh and self refresh
64ms refresh period (4K cycle)
MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
-
Burst Length :
1 , 2 , 4 , 8 or full page for Sequential Burst
1 , 2 , 4 or 8 for Interleave Burst
Available package type :
- 86 pin 400mil TSOP(II) and Lead free
Operating temperature :
-
0 ~ +70
°
C
PART NUMBER EXAMPLES
T436432B
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
2M x 32 SDRAM
512K x 32bit x 4Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T436432B is 67,108,864 bits synchronous
high data rate Dynamic RAM organized as
4 x 524,288 words by 32 bits , fabricated with high
performance CMOS technology . Synchronous
design allows precise cycle control with the use of
system clock I/O transactions are possible on every
clock cycle . Range of operating frequencies ,
programmable burst length and programmable
latencies allow the same device to be useful for a
variety of high bandwidth , high performance
memory system applications.
PART NO.
CLOCK
CYCLE TIME
MAX
FREQUENCY
200 MHz
PACKAGE
OPERATING
TEMPERATURE
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
0 ~ +70
°
C
T436432B-5SG
5ns
TSOP-II Lead free
T436432B-5S
T436432B-55SG
T436432B-55S
5ns
5.5ns
200 MHz
183 MHz
183 MHz
TSOP-II
TSOP-II Lead free
5.5ns
TSOP-II
T436432B-6SG
6ns
166 MHz
TSOP-II Lead free
T436432B-6S
6ns
166 MHz
TSOP-II
0 ~ +70
°
C
T436432B-7SG
7ns
143 MHz
TSOP-II Lead free
0 ~ +70
°
C
T436432B-7S
7ns
143 MHz
TSOP-II
0 ~ +70
°
C
T436432B-8SG
8ns
125 MHz
TSOP-II Lead free
0 ~ +70
°
C
T436432B-8S
8ns
125 MHz
TSOP-II
0 ~ +70
°
C
T436432B-10SG
10ns
100 MHz
TSOP-II Lead free
0 ~ +70
°
C
T436432B-10S
10ns
100 MHz
TSOP-II
0 ~ +70
°
C
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| T436432B-10S | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-10SG | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-55S | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T436432B-10S | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-10SG | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-55S | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-55SG | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| T436432B-5S | 制造商:TMT 制造商全稱:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
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