參數(shù)資料
型號: T4
廠商: 意法半導(dǎo)體
英文描述: 4A TRIACS
中文描述: 第4A雙向可控硅
文件頁數(shù): 2/8頁
文件大小: 118K
代理商: T4
T4 Series
2/8
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
THERMAL RESISTANCES
S = Copper surface under tab
Symbol
Test Conditions
Quadrant
T4
Unit
T405
T410
T435
I
GT
(1)
V
GT
V
GD
V
D
= 12 V R
L
= 30
I - II - III
MAX.
5
10
35
mA
I - II - III
MAX.
1.3
V
V
D
= V
DRM
R
L
= 33 k
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
I - II - III
MIN.
0.2
V
I
H
(2)
I
L
MAX.
10
15
35
mA
I - III
II
MAX.
10
15
20
25
30
40
50
60
400
mA
dV/dt (2)
V
D
= 67 %V
DRM
gate open Tj = 125°C
(dV/dt)c = 0.1 V/μs Tj = 125°C
(dV/dt)c = 10 V/μs Tj = 125°C
Without snubber
Tj = 125°C
MIN.
V/μs
(dI/dt)c (2)
MIN.
1.8
0.9
-
2.7
2.0
-
-
-
A/ms
2.5
Symbol
Test Conditions
Value
Unit
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 5.5 A tp = 380 μs
Tj = 25°C
MAX.
1.6
V
Threshold voltage
Tj = 125°C
MAX.
0.9
V
Dynamic resistance
Tj = 125°C
MAX.
120
m
μA
V
DRM
= V
RRM
Tj = 25°C
MAX.
5
Tj = 125°C
1
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
DPAK
IPAK
TO-220AB
ISOWATT220AB
2.6
°C/W
4.0
R
th(j-a)
Junction to ambient
S = 0.5 cm
2
DPAK
70
°C/W
TO-220AB
ISOWATT220AB
IPAK
60
100
T
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