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參數(shù)資料
| 型號(hào)： | T555714M01-DBW |
| 廠商： | Atmel Corp. |
| 英文描述： | COMPACT VIDEO SPLITTER 4 CHANNEL |
| 中文描述： | 多功能330位讀/寫射頻識(shí)別芯片 |
| 文件頁(yè)數(shù)： | 19/30頁(yè) |
| 文件大小： | 711K |
| 代理商： | T555714M01-DBW |
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19
T5557
4517E–RFID–02/03
Absolute Maximum Ratings
Parameters
Maximum DC current into Coil 1/Coil 2
Maximum AC current into Coil 1/Coil 2
f = 125 kHz
Power dissipation (dice)
(free-air condition, time of application: 1 s)
Electrostatic discharge maximum to
MIL-Standard 883 C method 3015
Operating ambient temperature range
Storage temperature range (data retention reduced)
Symbol
I
coil
Value
20
Unit
mA
I
coil p
20
mA
P
tot
100
mW
V
max
4000
V
T
amb
T
stg
-40 to +85
-40 to +150
°
C
°
C
Electrical Characteristics
T
amb
= +25
°
C; f
coil
= 125 kHz; unless otherwise specified
No.
Parameters
1
RF frequency range
Test Conditions
Symbol
f
RF
Min.
100
Typ.
125
Max.
150
Unit
kHz
Type*
2.1
Supply current
(without current
consumed by the
external LC tank circuit)
T
amb
= 25
°
C
(1)
(see Figure 24)
Read – full temperature
range
Programming full
temperature range
POR threshold
(50 mV hysteresis)
Read mode and write
command
Program EEPROM
(2)
V
coil pp
= 6 V
10 mA current into
Coil 1/2
V
coilpp
= 6 V on test circuit
generator and
modulation ON
(3)
Thermal stability
I
DD
1.5
3
A
T
2.2
2
4
A
Q
2.3
25
40
A
Q
3.1
Coil voltage (AC supply)
V
coil pp
3.2
3.6
4.0
V
Q
3.2
(2)
6
V
clamp
V
Q
3.3
4
8
V
clamp
3
V
ms
Q
Q
Start-up time
t
startup
2.5
5
Clamp voltage
V
clamp
17
23
V
T
6.1
Modulation parameters
V
mod pp
4.2
4.8
V
T
6.2
I
mod pp
400
600
A
T
6.3
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes:
1. I
DD
measurement setup R = 100 k; V
CLK
= V
coil
= 5 V: EEPROM programmed to 00 ... 000 (erase all); chip in modulation
defeat. I
DD
= (V
OUTmax
- V
CLK
)/R
2. Current into Coil 1/Coil 2 is limited to 10 mA. The damping circuitry has the same structure as the e5550. The damping
characteristics are defined by the internally limited supply voltage (= minimum AC coil voltage)
3. V
mod
measurement setup: R = 2.3 k; V
CLK
= 3 V; setup with modulation enabled (see Figure 25).
4. Since EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested dice
on uncutted wafer) delivery.
5. The tolerance of the on-chip resonance capacitor C
r
is ±10% at 3 over whole production. The capacitor tolerance is
±3% at 3 on a wafer basis.
6. The tolerance of the microcodule resonance capacitor C
r
is ±5% at 3 over whole production.
V
mod
/T
amb
-6
mV/
°
C
Q
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T555714M01-DDT | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Multifunctional 330-bit Read/Write RF-Identification IC |
| T555714M01-DDW | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Multifunctional 330-bit Read/Write RF-Identification IC |
| T555714M01-PAE | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Multifunctional 330-bit Read/Write RF-Identification IC |
| T555714M01-PP | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Multifunctional 330-bit Read/Write RF-Identification IC |
| T555714M01-TAS | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Multifunctional 330-bit Read/Write RF-Identification IC |
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