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參數(shù)資料
| 型號(hào)： | T555715M01-DDT |
| 廠商： | Atmel Corp. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁(yè)數(shù)： | 20/30頁(yè) |
| 文件大小： | 711K |
| 代理商： | T555715M01-DDT |
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20
T5557
4517E–RFID–02/03
Figure 25.
Measurement Setup for I
DD
and V
mod
7
Programming time
From last command gap
to re-enter read mode
(64 + 648 internal clocks)
Erase all / Write all
(4)
Top = 55 C
(4)
Top = 150 C
(4)
Top = 250 C
(4)
Mask option
(5)
T
prog
5
5.7
6
ms
T
8
Endurance
n
cycle
t
retention
t
retention
t
retention
C
r
C
r
100000
10
96
24
70
Cycles
Years
hrs
hrs
pF
Q
9.1
9.2
9.3
10
Data retention
20
50
T
Q
T
Resonance capacitor
78
86
11.1
Microdule capacitor
parameters
Capacitance tolerance
T
amb
Temperature coefficient
313.5
330
346.5
pF
T
11.2
11.3
*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data
Notes:
1. I
DD
measurement setup R = 100 k; V
CLK
= V
coil
= 5 V: EEPROM programmed to 00 ... 000 (erase all); chip in modulation
defeat. I
DD
= (V
OUTmax
- V
CLK
)/R
2. Current into Coil 1/Coil 2 is limited to 10 mA. The damping circuitry has the same structure as the e5550. The damping
characteristics are defined by the internally limited supply voltage (= minimum AC coil voltage)
3. V
mod
measurement setup: R = 2.3 k; V
CLK
= 3 V; setup with modulation enabled (see Figure 25).
4. Since EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested dice
on uncutted wafer) delivery.
5. The tolerance of the on-chip resonance capacitor C
r
is ±10% at 3 over whole production. The capacitor tolerance is
±3% at 3 on a wafer basis.
6. The tolerance of the microcodule resonance capacitor C
r
is ±5% at 3 over whole production.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Electrical Characteristics
T
amb
= +25
°
C; f
coil
= 125 kHz; unless otherwise specified
No.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
Coil 1
T5557
Coil 2
Substrate
-
+
V
CLK
V
OUTmax
R
750
750
BAT68
BAT68
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