參數(shù)資料
型號(hào): T63H0001A
廠商: TM Technology, Inc.
英文描述: Li-Ion Battery Protector
中文描述: 鋰離子電池保護(hù)器
文件頁數(shù): 5/7頁
文件大?。?/td> 55K
代理商: T63H0001A
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which enables charge control Nch-MOS-FET
for turning to “OFF”. Though the VDD voltage
would be going up to a higher level than Vdet1 if
it is within a time period of the output delay time,
VD1 would not be output a signal for turning
Reset conditions from overcharging
There can be two cases to reset the VD1 making
the Cout pin level to “H” again after detecting
overcharge. Resetting the VD1 makes the
charging system ready for resumption of
charging process.
The first case is in such condition that a time
when the VDD voltage is coming down to a
level lower than “Vdet1-Vhys1”. While in the
second case, disconnecting a charger from the
battery pack can make the VD1 resetting when
VD2/Over-Discharge Detector
The VD2 monitors a VDD pin voltage. When
the VDD voltage crosses the over-discharge
detector threshold Vdet2 from a high value to a
value lower than the Vdet2, the VD2 can sense
an over-discharging and the external discharge
control Nch-MOS-FET turns to “OFF” with
Dout pin being at “L”.
Resetting the VD2 with the Dout pin level being
“H” again after detecting over-discharge is only
possible by connecting a charger to the battery
VDD voltage is higher than Vdet2.
An output delay time for the over-discharge
detection is fixed internally. Through the VDD
voltage would be going down to a lower level
than Vdet2 if it is within a time period of the
output delay time, VD2 would not output a
signal for turning “OFF” of discharge control
VD3/Excess Current Detector, Short Circuit Protector
Both of the excess current detector and short
T63H0001A
TM Technology Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date:MAR. 2004
Revision:A
“OFF” of charge control Nch-MOS-FET.
A level shifter incorporated in a buffer driver for
the Cout pin makes the “L” of Cout pin to the
VM pin voltage and the “H” of Cout pin is set to
VDD voltage with CMOS buffer.
the VDD level is within hysteresis width
(Vdet1-Vhys1<=VDD<Vdet1)
After detecting over-charge with the VDD
voltage of higher than Vdet1, connecting system
load to the battery pack makes load current
allowable through parasitic diode of external
charge control Nch-MOS-FET. The Cout level
would be “H” when the VDD level is coming
down to a level below the Vdet1 by continuous
drawing of load current.
pack. When the VDD voltage stays under
over-discharge detector threshold Vdet2 charge
current can flow through parasitic diode of
external control Nch-MOS-FET, then after the
VDD voltages comes up to a value larger than
Vdet2 discharging process would be advanced
through “ON” state discharge control
Nch-MOS-FET. Connecting a charger to the
battery pack makes the Dout level being “H”
instantaneously when the
Nch-MOS-FET.
After detection of an over-discharge by VD2,
supply current would be reduced to 0.3uA TYP.
At VDD=2V and into standby, only the charger
detector is operating.
The output type of Dout pin is CMOS having
“H” level of VDD and “L” level of VSS.
circuit protector can work when both control
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