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參數(shù)資料
| 型號： | T63H0008A-BX |
| 廠商： | TM Technology, Inc. |
| 英文描述： | Li-Ion/Polymer Battery for one-cell Protector |
| 中文描述： | Li-Ion/Polymer電池單細(xì)胞保護(hù) |
| 文件頁數(shù)： | 18/20頁 |
| 文件大?。?/td> | 341K |
| 代理商： | T63H0008A-BX |
TE
CH
tm
Application Circuits
T63H0008A
TM Technology, Inc. reserves the right
P. 18
Publication Date: Dec. 2003
to change products or specifications without notice. Revision:A
T63H0008A
BATTERY
FET1
R1=470ohm
5
6
4
2
3
1
VDD_1
VSS
DS
V
C
D
R2
2K
EB-
EB+
C1
0.1uF
FET2
Table Constant for external components
Symbol
Parts
Purpose
Recommend
min.
max.
Remarks
FET1
N channel
MOSFET
Charge
control
---
---
---
*1) 0.4 V= Threshold voltage =
over-discharge detection voltage, Gate
to source withstand voltage
= Charger voltage.
*1) 0.4 V= Threshold voltage =
over-discharge detection voltage, Gate
to source withstand voltage
= Charger voltage.
FET2
N channel
MOSFET
Discharge control
---
---
---
R1
Resistor
ESD protection
For Power
fluctuation
470ohm
300ohm
1k
ohm
*2) Set resistance so that 2 x R1
= R2
C1
Capacitor
For Power
fluctuation
0.1uF
0.022
uF
1.0uF *3) Install a capacitor of 0.022uF of
higher between VDD and VSS.
R2
Resistor
Protection for
reverse connection
of a charger
2kohm
300ohm
4k
ohm
*4) To prevent current when a charger
is reversely connected. Select a larger
resistance within the range from
300ohm to 4kohm.
*1) If an FET with a threshold voltage of 0.4 V or lower is used, the FET may not cut the charging current.
If an FET with a threshold voltage equal to or higher than the over-discharge detection voltage is used,
discharging may be stoped before over-discharge is detected.
If the withstand voltage between the gate and source is lower than the charger voltage, the FET may
destroy.
*2) If R1 has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum rating
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