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參數(shù)資料
| 型號(hào)： | T6B70BF |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic |
| 中文描述： | 東芝的CMOS數(shù)字集成電路硅單片 |
| 文件頁數(shù)： | 7/15頁 |
| 文件大小： | 280K |
| 代理商： | T6B70BF |
T6B70AF
2002-02-28
7
Maximum Ratings
(Ta = 25°C ± 1.5°C)
Characteristics
Symbol
Rating
Unit
Power supply voltage
V
DD
0.3 to 6.0
V
Input voltage
VI
0.3 to V
DD
+ 0.3
V
Input peak current
IIK
20 to 20
mA
Operating temperature
T
opr
20 to 80
°C
Storage temperature
T
stg
55 to 125
°C
Power dissipation
P
D
(Note 1)
0.54
W
Note 1: Decreases approximately 4.35 mW per 1°C.
Electrical Characteristics
(unless otherwise specified, V
DD
= 5.0 V, V
SS
= 0 V, FOSC = 4 MHz and Ta =
20 to 80°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
V
DD
pin (pin 16)
Operating voltage
V
DD
―
―
4.5
5.0
5.5
V
Current consumption
I
DD
1
No load, Fosc = 4 MHz
―
―
10
mA
OSCIN pin (pin 1) and OSCOUT pin (pin 2)
Oscillation frequency
FOSC
2
―
1
4
10
MHz
High level
VIHOSC
3
―
0.7
V
DD
―
V
DD
Input voltage
Low level
VILOSC
3
―
V
SS
―
0.3
V
DD
V
High level
IIHROSC
4
VIN = 5 V, Ta = 25°C
3.2
6.58
13.2
Input current
Low level
IILROSC
4
VIN = 0 V, Ta = 25°C
3.2
6.58
13.2
μA
High level
VOHOSC
3
IOH =
0.1 mA
V
DD
1.0
―
V
DD
Output voltage
Low level
VOLOSC
4
IOL = +0.1 mA
V
SS
―
V
+
0.6
V
RESET
pin (pin 5)
Low to High input switching level
VIHRST
5
―
0.65
V
DD
―
V
DD
V
High to Low input switching level
VILRST
5
―
V
SS
―
0.35
V
DD
V
High-level input current
IIHRST
6
VIN = V
DD
10
―
10
μA
Pull-up resistance 1
IILRRST1
7
VIN = V
SS
, Ta = 25
9
15
21
k
Pull-up resistance 2
IILRRST2
7
VIN = V
SS
, Ta =
20 to 80
6.3
―
27.3
k
SCTL
pin (pin 4)
Low to High input switching level
VIHSCTL
8
―
0.65
V
DD
―
V
DD
V
High to Low input switching level
VILSCTL
8
―
V
SS
―
0.35
V
DD
V
High level
IIHSCTL
9
VIN = V
DD
1
―
1
Input current
Low level
IILSCTL
9
VIN = V
DD
1
―
1
μA
FOUT pin (pin 3)
High level
VOHFOUT
10
IOH =
1.0 mA
V
DD
―
V
DD
Output voltage
Low level
VOLFOUT
11
IOL = +1.0 mA
V
SS
―
V
SS
+
0.6
V
Note 2: One direction in which current flow into the IC should be + (sink) and the other direction in which current
flow out from the IC should be
(drain).
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