參數(shù)資料
型號: T820-400W
廠商: 意法半導體
英文描述: CONNECTOR ACCESSORY
中文描述: 連接器附件
文件頁數(shù): 2/5頁
文件大小: 62K
代理商: T820-400W
P
G (AV)
= 1W P
GM
=10 W (tp = 20
μ
s)
I
GM
= 4 A (tp = 20
μ
s
GATE CHARACTERISTICS
(maximumvalues)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junctionto ambient
50
°
C/W
Rth(j-c)
Junctionto case for A.C (360
°
conductionangle)
3.1
°
C/W
THERMAL RESISTANCES
Symbol
TestConditions
Quadrant
T820
T830
Unit
I
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
I-II-III
MAX
20
30
mA
V
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
I-II-III
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125
°
C
I-II-III
MIN
0.2
V
tgt
V
D
=V
DRM
dl
G
/dt= 3A
μ
s
I
G
= 500mA
Tj= 25
°
C
I-II-III
TYP
2
μ
s
I
H
*
I
T
= 100mA
Gate open
Tj= 25
°
C
MAX
35
50
V
TM
*
I
TM
= 11A tp= 380
μ
s
Tj= 25
°
C
MAX
1.5
V
I
DRM
I
RRM
VDRMrated
V
RRM
rated
Tj= 25
°
C
MAX
10
μ
A
Tj= 125
°
C
MAX
2
mA
dV/dt*
Linear slope up to
V
D
=67%V
DRM
Gate open
Tj= 125
°
C
MIN
200
300
V/
μ
s
(dV/dt)c*
(dI/dt)c = 4.5 A/ms
(seenote) Tj= 125
°
C
MIN
10
20
V/
μ
s
* Foreither polarity of electrode A2voltage with reference to electrode A1.
Note :
Inusual applications where (dI/dt)cis below 4.5 A/ms,the (dV/dt)cis always lower than10V/
μ
s, and, therefore,it is
unnecessary
touse
a snuber R-C network accross T820W / T830W triacs.
ELECTRICALCHARACTERISTICS
T820W / 830W
2/5
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