參數(shù)資料
型號: T835-600G
廠商: 意法半導(dǎo)體
英文描述: HIGH PERFORMANCE TRIAC
中文描述: 高性能可控硅
文件頁數(shù): 4/5頁
文件大小: 102K
代理商: T835-600G
1
2
5
10
10
100
300
tp(ms)
ITSM(A),I2t(A2s)
Tj initial=25°C
ITSM
I2t
Fig. 7:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2
t.
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
S(Cu) (cm2)
Rth(j-a) (°C/W)
Fig. 9:
Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35
μ
m).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
I (A)
TM
Tj=25°C
Tj max.:
Vto=0.83V
Rt=56 m
Tj=Tj max.
V (V)
TM
Fig. 8:
On-state characteristics (maximum values).
0
40
80
120
160
200
240
280
320 360
T (°C)
250
200
150
100
50
0
Epoxy FR4
board
Metal-backed
board
245°C
215°C
t (s)
Fig. 10:
Typical reflow soldering heat profile, either
for mounting on FR4 or metal-backed boards.
T835-600G / T850-600G
4/5
相關(guān)PDF資料
PDF描述
T835-600 HIGH PERFORMANCE TRIAC
T850-600G HIGH PERFORMANCE TRIAC
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