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參數(shù)資料
| 型號(hào)： | T8A35-800H |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8A TRIACS |
| 中文描述： | 8A條雙向可控硅 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 47K |
| 代理商： | T8A35-800H |
BTA/BTB08 and T8 Series
5/10
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2-1:
RMS on-state current versus case
temperature (full cycle).
Fig. 2-2:
RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35
μ
m),full cycle.
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
Fig.
values).
4:
On-state
characteristics
(maximum
Fig. 5:
number of cycles.
Surge peak on-state current versus
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10
P (W)
IT(RMS)(A)
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
IT(RMS) (A)
BTA
BTB/T8
Tc(
°
C)
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT(RMS) (A)
D PAK
(S=1cm )
2
Tamb(
°
C)
DPAK
(S=0.5cm )
2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
K=[Zth/Rth]
Zth(j-c)
TO-220AB/D P
AK
Zth(j-a)
DPAK/IPAK
Zth(j-a)
tp(s)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
ITM (A)
Tj=25
°
C
Tj=Tj max
Tj max.
Vto = 0.85 V
Rd =50 m
VTM(V)
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
ITSM (A)
Non repetitive
Tj initial=25
°
C
Repetitive
°
C
One cycle
t=20ms
Number of cycles
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