參數(shù)資料
型號: TA1317AFG
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
中文描述: 偏轉處理器芯片電視
文件頁數(shù): 20/58頁
文件大?。?/td> 1062K
代理商: TA1317AFG
TA1317AFG
2005-08-18
20
Electrical Characteristics
(unless otherwise specified,
V
CC
=
9 V, Ta
=
25°C)
Current dissipation
Pin Name
Symbol
Test
Circuit
Min
Typ.
Max
Unit
V
CC
I
CC
40
50.8
62
mA
Pin voltages
Pin No.
Pin Name
Symbol
Test
Circuit
Min
Typ.
Max
Unit
1
V
REF
V
1
4.60
4.88
5.10
V
6
V -DC REF
V
6
4.60
4.88
5.10
V
AC Characteristics
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Vertical trigger input shaped voltage
V
TH
(Note 1)
1.2
1.5
1.7
V
V
TCH
3.90
4.10
4.30
V
TCM
2.95
3.15
3.35
Timing pulse output voltage
V
TCL
(Note 2)
0.97
1.07
1.17
V
Vertical ramp wave amplitude
V
RMP
(Note 3)
1.65
1.75
1.85
Vp-p
Vertical drive amplification
GV
(Note 4)
21
24
27
dB
V
5H
2.5
3.3
4.1
Vertical drive output voltage
V
5L
(Note 5)
0.00
0.00
0.30
V
Vertical NF signal amplitude
V
NFM
(Note 6)
1.65
1.85
2.05
Vp-p
V
DC
(80)
3.00
3.55
4.10
V
DC
(83)
5.65
6.20
6.75
Vertical phase adjustment 1 (V shift)
change amount
V
DC
(Note 7)
2.30
2.65
3.00
V
V
DD
(00)
1.64
1.82
2.00
V
DD
(FE)
2.87
3.16
3.45
Vertical phase adjustment 2
(V centering) change amount
V
DD
(Note 8)
1.30
1.45
1.60
V
V
NFL
0.85
1.00
1.15
V
NFH
2.55
2.75
2.95
Vp-p
V
NFP
43
48
53
Vertical amplitude adjustment
(picture height) change amount
V
NFN
(Note 9)
53
48
43
%
V
1
(00)
0.90
1.06
1.22
V
2
(00)
0.69
0.81
0.93
V
1
(80)
0.82
0.96
1.10
V
2
(80)
0.77
0.91
1.05
V
1
(F8)
0.73
0.86
0.99
V
2
(F8)
0.85
1.00
1.15
Vp-p
Vertical linearity correction
(V linearity) change amount
V
LIN
(Note 10)
9.5
10.5
12.5
%
V
VT
(00)
4.60
4.95
5.20
V
VT
(FF)
5.40
5.70
6.00
Vertical symmetry (V symmetry)
change amount
V
VT
(Note 11)
0.67
0.76
0.85
V
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