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參數(shù)資料
| 型號(hào)： | TA2136F |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Bipolar Liner Integrated Circuit Silicon Monolithic |
| 中文描述： | 東芝班輪雙極硅單片集成電路 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | TA2136F |
TA2136F/N
2002-02-12
4
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
V
CC
12
V
TA2136F
(Note 5)
*
400
Power dissipation
P
d
TA2136N
(Note 6)
*
1200
mW
Operating temperature
T
opr
40 to 85
°C
Storage temperature
T
stg
55 to 150
°C
Note 5: Derated above 25°C in the proportion of 3.2 mW/°C
Note 6: Derated above 25°C in the proportion of 9.6 mW/°C
Electrical Characteristics
(unless otherwise specified, V
CC
9 V, f 1 kHz, RL 10 k , V
in
10dBV, Rg 600 ,
bypass mode, Ta 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Supply voltage
V
CC
V
in
0
4.5
9
12
V
Iccq (BYP)
V
in
0
4
7
Iccq (SRS)
V
in
0, SRS STEREO
8
14
Supply current
Iccq (MONO)
V
in
0, SRS MONO
8
14
mA
Input resistance
Rin
40
50
60
k
Output clipping voltage
V
OCL
THD 1%
1.4
1.7
Vrms
THD (SRS)
SRS STEREO,
Space&Center: max
0.15
THD (MONO)
SRS MONO
0.2
Total harmonic distortion
THD (BYP)
SRS BYPASS, TEST “H”
0.004
%
Bypass gain
Ｇ
V
(BYP)
5
3
1
dB
Output noise voltage
V
ON
(SRS)
Input GND,
Space&Center: MID
BW 20 Hz to 20 kHz
35
50
Vrms
V
CH
High level
2
V
CC
Mode select control voltage
V
CL
Low level
GND
1
V
<Mode Select>
Mode
Mode1
Mode2
Bypass
L
3D stereo
H
H
3D mono
H
L
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| TA2136N | TOSHIBA Bipolar Liner Integrated Circuit Silicon Monolithic |
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相關(guān)代理商/技術(shù)參數(shù) |
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| TA2136FG | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Sound Retrieval System; 3D Sound IC |
| TA2136N | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Bipolar Liner Integrated Circuit Silicon Monolithic |
| TA2136NG | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Sound Retrieval System; 3D Sound IC |
| TA2145 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:3V STEREO GEADPHONE AMPLIFIER (3V USE) |
| TA2145AF | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:3 V Stereo Headphone Amplifier (3 V USE) |
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