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參數(shù)資料
| 型號(hào)： | TB28F800BV-T80 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 1M X 8 FLASH 5V PROM, 80 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁(yè)數(shù)： | 52/55頁(yè) |
| 文件大?。?/td> | 638K |
| 代理商： | TB28F800BV-T80 |
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
52
SEE NEW DESIGN RECOMMENDATIONS
4.14
AC Characteristics
—CE#-Controlled Write Operations
(1, 11)
—
Extended Temperature
Prod
TBV-80
TBV-80
TBE-120
Sym
Parameter
V
CC
3.3 ±0.3 V
(9)
5 V±10%
(10)
Unit
Load
50 pF
100 pF
Notes
Min
Max
Min
Max
t
AVAV
t
PHEL
Write Cycle Time
110
80
ns
RP# High Recovery to CE# Going Low
0.8
0.45
μ
s
t
WLEL
t
PHHEH
t
VPEH
t
AVEH
t
DVEH
t
ELEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHQV1
WE# Setup to CE# Going Low
0
0
ns
Boot Block Lock Setup to CE# Going High
6,8
200
100
ns
V
PP
Setup to CE# Going High
Address Setup to CE# Going High
5,8
200
100
ns
90
60
ns
Data Setup to CE# Going High
3
70
60
ns
CE# Pulse Width
4
90
60
ns
Data Hold Time from CE# High
0
0
ns
Address Hold Time from CE# High
4
0
0
ns
WE# Hold Time from CE# High
3
0
0
ns
CE# Pulse Width High
20
20
ns
Word/Byte Program Time
2,5
6
6
μs
t
EHQV2
Erase Duration (Boot)
2,5,6
0.3
0.3
s
t
EHQV3
Erase Duration (Param)
2,5
0.3
0.3
s
t
EHQV4
Erase Duration (Main)
2,5
0.6
0.6
s
t
QVVL
t
QVPH
t
PHBR
NOTES:
See AC Characteristics
—WE#-Controlled Write Operations
for notes 1 through 10.
11. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE# in systems where CE#
defines the write pulse-width (within a longer WE# timing waveform), all set-up, hold and inactive WE# times should be
measured relative to the CE# waveform.
V
PP
Hold from Valid SRD
RP# V
HH
Hold from Valid SRD
Boot-Block Lock Delay
5,8
0
0
ns
6,8
0
0
ns
7,8
200
100
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TB28F800BVB90 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BVT90 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TB28F800BVT90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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