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參數(shù)資料
| 型號： | TBB1002 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| 中文描述： | 雙內(nèi)建偏置電路場效應(yīng)晶體管集成電路甚高頻/超高頻射頻放大器 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 66K |
| 代理商： | TBB1002 |
TBB1002
6
400
300
200
100
0
50
100
150
200
0
1
2
3
4
5
25
20
15
10
5
V = 4 V
V = V
DS
25
20
15
10
5
0
1
2
3
4
5
50
40
30
20
10
0
1
2
3
4
5
V = 5 V
R = 120 k
V = 5 V
V = 4 V
C
Ambient Temperature Ta (
°
C)
* Value on the glass epoxy board (49mm
×
38mm
×
1mm)
Maximum Channel Power
Dissipation Curve
D
D
Typical Output Characteristics (FET1)
Drain to Source Voltage V (V)
Drain Current vs.
Gate1 Voltage (FET1)
Gate1 Voltage V (V)
D
D
R =6
G
8
120k
150k
180k
2 V
V = 1 V
4 V
3 V
Gate1 Voltage V (V)
Forward Transfer Admittance
vs. Gate1 Voltage (FET1)
f
F
150 k
RG
100 k
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TBB1002_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002BMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
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