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參數(shù)資料
| 型號： | TBB1010 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| 中文描述： | 雙內(nèi)建偏置電路場效應(yīng)晶體管集成電路甚高頻/甚高頻射頻放大器 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大小： | 80K |
| 代理商： | TBB1010 |
TBB1010
Rev.2, Feb. 2003, page 7 of 10
0
1
2
34
4
3
2
1
0
Gate2 to Source Voltage V
(V)
G2S
Input
Capacitance
Ciss
(pF)
Input Capacitance vs.
Gate2 to Source Voltage
30
25
20
15
10
5
0
10
20
50
100 200
500 1000
V
= 5 V
V
= 5 V
V
= 4 V
DS
G1
G2S
Drain Current vs. Gate Resistance
Drain
Current
I
(mA)
D
Gate Resistance R
(k
)
G
40
35
30
25
20
15
10
20
50
100 200
500 1000
V
= 5 V
V
= 5 V
V
= 4 V
f = 200 MHz
DS
G1
G2S
Power Gain vs. Gate Resistance
Gate Resistance R
(k
)
G
Power
Gain
PG
(dB)
0
4
3
2
1
10
20
50
100
200
500 1000
Noise Figure vs. Gate Resistance
Noise
Figure
NF
(dB)
Gate Resistance R
(k
)
G
V
= 5 V
V
= 5 V
V
= 4 V
f = 200 MHz
DS
G1
G2S
V
= 5 V
V
= 5 V
R
= 120 k
f = 1 MHz
DS
G1
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TBB1010_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1010KMTL-H | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier |
| TBB1012 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
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