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參數(shù)資料
| 型號： | TBT81N6 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Pigtailed PD for analog application |
| 中文描述： | 辮子放電模擬應(yīng)用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 260K |
| 代理商： | TBT81N6 |
Pigtailed PD for analog application
DataSheet TAP4NN3 Series
Teradian Inc.
- 2 / 4 - DS-TP-110-Rev01
2004-07-14
Absolute Maximum Ratings
Parameters
Symbol
Unit
Min.
Max.
Remarks
Ambient Operating Temperature
T
op
℃
-40
85
Outdoor use
Storage Temperature
T
stg
℃
-40
85
Reverse Voltage
V
RP
V
-
15/20/
Reverse Current
I
RP
mA
-
3/1 /
Forward Current
I
FL
mA
-
50/2/
Lead Soldering Temp./Time
℃
/sec
260/10
Electrical & Optical Characteristics
(T
op
= 25
℃
)
Parameters
Symbol
Condition
Unit
Min.
Typ.
Max.
Remark
Detection range
λ
V
R
=5V, R>
0.75
R > 0.65
μ
m
1.1
1.6
Responsivity
R
V
R
=5V,
λ
=1.3
μ
m
V
R
=5V,
λ
=1.5
μ
m
A/W
0.80
0.85
0.85
0.90
Dark Current
I
D
V
R
=5V
nA
1.0
Cut-off Frequency
f
c
-3dB, V
R
=5V
GHz
2/
3
R
L
=50
Reverse Breakdown
Voltage
V
BD
V
R
=5V, I
RD
=1
μ
A
V
25/0
Capacitance
C
V
R
=5V, f=1MHz
pF
0.6
Second-Order Distortion
IMD2
V
R
=12V,
P
AVG
=0dBm,
OMI=0.4, Note1
dBc
-70
TAP4NN3
1)
TZP4NN3
2)
TBP4NN3
3)
Third-Order Distortion
IMD3
Note 1
dBc
-75
TZP4NN3
2)
TBP4NN3
3)
Back Reflection
IL
dB
-45
Active Area
Diameter
μ
m
75/
70
45
for 2GHz
for 5GHz
Note1-1) TAP4NN3 : Two-tone test condition : f1=13MHz, f2=19MHz, f1
±
f2
Note1-2) TZP4NN3 : Two-tone test condition : f1=320MHz, f2=450MHz, f1
±
f2,
λ
=1550nm per channel
Note1-3) TBP4NN3 : same as the Note1-2
! Handling Caution
The Photo-diode can be damaged by overvoltage and current surges. Precautions should be
taken for transient power supply.
This device is susceptible to damage as a result of electrostatic discharge(ESD). Take proper
precautions during both handling and testing
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