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參數(shù)資料
| 型號： | TC429 |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 6A Single High-Speed, CMOS Power MOSFET Driver |
| 中文描述： | 6A條單高速，功率MOSFET驅(qū)動器的CMOS |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 110K |
| 代理商： | TC429 |
4-176
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal.....V
DD
+0.3V to GND – 0.3V
Power Dissipation (T
A
≤
70
°
C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
Derating Factors
Plastic DIP ............................ 5.6 mW/
°
C Above 36
°
C
CerDIP ...................................................... 6.4 mW/
°
C
Operating Temperature Range
C Version ...............................................0
°
C to +70
°
C
I Version ...........................................– 25
°
C to +85
°
C
E Version ..........................................– 40
°
C to +85
°
C
M Version .......................................– 55
°
C to +125
°
C
ELECTRICAL CHARACTERISTICS:
T
A
= +25
°
C with 7V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
2.4
—
– 10
1.8
1.3
—
—
0.8
10
V
V
μ
A
0V
≤
V
IN
≤
V
DD
High Output Voltage
Low Output Voltage
Output Resistance
V
DD
– 0.025
—
—
—
—
1.8
—
V
V
0.025
2.5
V
IN
= 0.8V,
I
OUT
= 10mA, V
DD
= 18V
V
IN
= 2.4V,
I
OUT
= 10mA, V
DD
= 18V
V
DD
= 18V (See Figure 3)
—
1.5
2.5
I
PK
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
I
S
Peak Output Current
—
6
—
A
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, C
L
= 2500pF
Figure 1, C
L
= 2500pF
Figure 1
Figure 1
—
—
—
—
23
25
53
60
35
35
75
75
nsec
nsec
nsec
nsec
Power Supply Current
V
IN
= 3V
V
IN
= 0V
—
—
3.5
0.3
5
mA
0.5
NOTES:
1. Switching times guaranteed by design.
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
TC429
6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC429EPA | 6A Single High-Speed, CMOS Power MOSFET Driver |
| TC429MJA | 6A Single High-Speed, CMOS Power MOSFET Driver |
| TC429 | 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER |
| TC429EPA | 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER |
| TC429MJA | 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC429_03 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:6A Single High-Speed, CMOS Power MOSFET Driver |
| TC429_13 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:6A Single High-Speed, CMOS Power MOSFET Driver |
| TC429CPA | 功能描述:功率驅(qū)動器IC 6A Power RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC429EMF | 功能描述:功率驅(qū)動器IC 6A Sngl RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC429EMF713 | 功能描述:功率驅(qū)動器IC 6A Sngl RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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