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參數(shù)資料
| 型號： | TC429EPA |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 6A Single High-Speed, CMOS Power MOSFET Driver |
| 中文描述： | 6A條單高速，功率MOSFET驅(qū)動(dòng)器的CMOS |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 110K |
| 代理商： | TC429EPA |
4-176
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal.....V
DD
+0.3V to GND – 0.3V
Power Dissipation (T
A
≤
70
°
C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
Derating Factors
Plastic DIP ............................ 5.6 mW/
°
C Above 36
°
C
CerDIP ...................................................... 6.4 mW/
°
C
Operating Temperature Range
C Version ...............................................0
°
C to +70
°
C
I Version ...........................................– 25
°
C to +85
°
C
E Version ..........................................– 40
°
C to +85
°
C
M Version .......................................– 55
°
C to +125
°
C
ELECTRICAL CHARACTERISTICS:
T
A
= +25
°
C with 7V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
2.4
—
– 10
1.8
1.3
—
—
0.8
10
V
V
μ
A
0V
≤
V
IN
≤
V
DD
High Output Voltage
Low Output Voltage
Output Resistance
V
DD
– 0.025
—
—
—
—
1.8
—
V
V
0.025
2.5
V
IN
= 0.8V,
I
OUT
= 10mA, V
DD
= 18V
V
IN
= 2.4V,
I
OUT
= 10mA, V
DD
= 18V
V
DD
= 18V (See Figure 3)
—
1.5
2.5
I
PK
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Power Supply
I
S
Peak Output Current
—
6
—
A
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, C
L
= 2500pF
Figure 1, C
L
= 2500pF
Figure 1
Figure 1
—
—
—
—
23
25
53
60
35
35
75
75
nsec
nsec
nsec
nsec
Power Supply Current
V
IN
= 3V
V
IN
= 0V
—
—
3.5
0.3
5
mA
0.5
NOTES:
1. Switching times guaranteed by design.
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
TC429
6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
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PDF描述 |
|---|---|
| TC429MJA | 6A Single High-Speed, CMOS Power MOSFET Driver |
| TC429 | 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER |
| TC429EPA | 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER |
| TC429MJA | 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER |
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| TC42X-2-102E | 功能描述:微調(diào)電阻器 - 表面貼裝 1K 2mm SMD Single Turn RoHS:否 制造商:Murata 產(chǎn)品:Single-Turn Trimmer Potentiometers 產(chǎn)品類型:Single Turn 轉(zhuǎn)數(shù):1 元件類型:Cermet 錐度:Linear 電阻:10 kOhms 電壓額定值: 端接類型:SMD/SMT 功率額定值:250 mW (1/4 W) 容差:20 % 溫度系數(shù):150 PPM / C |
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