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| 型號(hào)： | TC43CPR |
| 廠商： | TelCom Semiconductor, Inc. |
| 英文描述： | LINEAR BUILDING BLOCK - VOLTAGE REFERENCE, DUAL OP AMP, DUAL COMPARATOR WITH SHUTDOWN MODE |
| 中文描述： | 線性積木-電壓基準(zhǔn)，雙運(yùn)算放大器，雙通道比較器關(guān)斷模式 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | TC43CPR |
TC43
LINEAR BUILDING BLOCK –
VOLTAGE REFERENCE, DUAL OP AMP,
DUAL COMPARATOR WITH SHUTDOWN MODE
2
PRELIMINARY INFORMATION
* Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ..............................................................6V
Package Power Dissipation (
T
A
≤
70
°
C)
PDIP ..............................................................840mW
SOIC (Narrow) ................................................700mW
Voltage on Any Pin:
(With Respect to GND)........
(V
SS
– 0.3V) to (V
DD
+0.3V)
Operating Temperature Range:
C Suffix ................................................. 0
°
C to +70
°
C
E Suffix ............................................– 40
°
C to + 85
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
ELECTRICAL CHARACTERISTICS:
T
A
= Over Operating Temperature Range, V
DD
= 5.0V
±
10%, V
SS
= 0V,
SHDN = V
DD
, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
DD
I
Q
I
SHDN
Supply Voltage
Supply Current, Operating
Supply Current, Shutdown Mode
1.8
—
—
—
10
5
5.5
15
8
V
μ
A
μ
A
All Outputs Open
All Outputs Open
(Note 1)
Shutdown Input
V
IH
V
IL
I
IL
Op Amps
T
SEL
T
DESEL
A
VOL
V
ICMR
V
OS
I
B
V
OS (DRIFT)
GBWP
SR
Input High Voltage
Input Low Voltage
Input Current
80% V
DD
—
—
—
—
—
—
V
V
μ
A
20% V
DD
1
Select Time (V
OUT
from SHDN = V
IH
)
Deselect Time (HI-Z from SHDN = V
IL
)
Large Signal Voltage Gain
Common Mode Input Voltage Range
Input Offset Voltage
Input Bias Current
Average Input Offset Voltage Drift
Gain-Bandwidth Product
Slew Rate
—
—
—
V
SS
–10
—
—
4
—
2
5
—
—
—
msec
μ
sec
dB
V
mV
pA
μ
V/
°
C
kHz
V/msec
C
L
= 100pF, R
L
= 47k
1.8 < V
DD
< 5.5V
V
CM
= (V
DD
– V
SS
)/2
100
—
±
1.0
50
30
7
2
V
DD
– 1.0
+10
—
—
—
—
Gain = 1, V
IN
= 4.0
P-P
C
L
= 100pF, R
L
= 1M
to V
SS
R
L
= 47k
V
OUT
CMRR
PSRR
R
OUT
(SD)
C
OUT
(SD)
I
SRC
Output Signal Swing
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Output Resistance in Shutdown
Output Capacitance in Shutdown
DC Output Source Current
V
SS
+ .20
—
—
20
—
3
—
80
80
—
40
8
V
DD
– .15
—
—
—
55
20
V
dB
dB
M
pF
mA
(4.5V to 5.5V)
SHDN = V
SS
SHDN = V
SS
(Note 5)
V
IN
= V
DD
Output Shorted to V
SS
(Note 2)
V
IN
= V
SS
Output Shorted to V
DD
(Note 2)
I
SINK
DC Output Sink Current
0.6
1.2
5
mA
Comparators
T
SEL
CMPTR1 Select Time
(V
OUT
from SHDN = V
IH
)
—
5
—
μ
sec
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