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參數(shù)資料
| 型號(hào)： | TC4404EOA |
| 廠商： | TelCom Semiconductor, Inc. |
| 英文描述： | 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS |
| 中文描述： | 1.5A的雙開漏MOSFET驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 84K |
| 代理商： | TC4404EOA |
4-220
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +22V
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
ELECTRICAL CHARACTERISTICS:
Specifications measured at T
A
= +25
°
C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
I
DC
I
R
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
– 1
—
—
—
—
0.8
1
V
V
μ
A
– 0V
≤
V
IN
≤
V
DD
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current (Any Drain)
Duty cycle < 2%, t
≤
300
μ
sec
Continuous Output Current (Any Drain)
Latch-Up Protection (Any Drain)
Withstand Reverse Current
Switching Time (Note 1)
t
R
Rise Time
t
F
Fall Time
t
D1
Delay Time
t
D2
Delay Time
Power Supply
I
S
Power Supply Current
V
DD
– 0.025
—
—
—
—
> 500
—
—
7
1.5
—
—
—
V
V
A
mA
mA
0.025
10
—
100
—
I
OUT
= 10 mA, V
DD
= 18V; Any Drain
Duty cycle < 2%, t
≤
300
μ
sec
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
—
—
—
—
25
25
15
32
30
30
30
50
nsec
nsec
nsec
nsec
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
—
—
—
—
4.5
0.4
mA
NOTE:
1. Switching times guaranteed by design.
thus minimizing chip count. Unused open drains should be
returned to the supply rail that their device sources are
connected to (pull-downs to ground, pull-ups to V
DD
), to
prevent static damage. In addition, in situations where
timing resistors or other means of limiting crossover currents
are used, like drains may be paralleled for greater current
carrying capacity.
These devices are built to operate in the most de-
manding electrical environments. They will not latch up
under any conditions within their power and voltage rat-
ings; they are not subject to damage when up to 5V of
noise spiking of either polarity occurs on their ground pin;
and they can accept, without damage or logic upset, up to
1/2 amp of reverse current (of either polarity) being forced
back into their outputs. All terminals are fully protected
against up to 2 kV of electrostatic discharge.
Package Thermal Resistance
CerDIP R
θ
J-A
............................................... 150
°
C/W
CerDIP R
θ
J-C
................................................. 55
°
C/W
PDIP R
θ
J-A
.................................................. 125
°
C/W
PDIP R
θ
J-C
.................................................... 45
°
C/W
SOIC R
θ
J-A
.................................................. 155
°
C/W
SOIC R
θ
J-C
.................................................... 45
°
C/W
Operating Temperature Range
C Version...............................................0
°
C to +70
°
C
E Version ..........................................– 40
°
C to +85
°
C
M Version .......................................– 55
°
C to +125
°
C
Package Power Dissipation (T
A
≤
70
°
C)
Plastic .............................................................730mW
CerDP.............................................................800mW
SOIC...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
TC4404
TC4405
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC4404EOA | 1.5A Dual Open-Drain MOSFET Drivers |
| TC4404MJA | 1.5A Dual Open-Drain MOSFET Drivers |
| TC4404EPA | 1.5A Dual Open-Drain MOSFET Drivers |
| TC4404 | 1.5A Dual Open-Drain MOSFET Drivers |
| TC4404CPA | 1.5A Dual Open-Drain MOSFET Drivers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC4404EOA713 | 功能描述:功率驅(qū)動(dòng)器IC 1.5A Dual Open-Drain RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC4404EPA | 功能描述:功率驅(qū)動(dòng)器IC 1.5A Dual Open-Drain RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC4404MJA | 功能描述:功率驅(qū)動(dòng)器IC 1.5A Dual Open-Drain RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| TC4405 | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1.5A Dual Open-Drain MOSFET Drivers |
| TC4405COA | 功能描述:功率驅(qū)動(dòng)器IC 1.5A Dual Open-Drain RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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