參數(shù)資料
型號(hào)： TC4429EPA
廠商： TelCom Semiconductor, Inc.
英文描述： 6A HIGH-SPEED MOSFET DRIVERS
中文描述： 6A條高速M(fèi)OSFET驅(qū)動(dòng)器
文件頁(yè)數(shù)： 4/5頁(yè)
文件大?。?/td> 64K
代理商： TC4429EPA
4-228
TELCOM SEMICONDUCTOR, INC.
TC4420
TC4429
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
TYPICAL CHARACTERISTICS
60
40
20
10
1000
10,000
CAPACITIVE LOAD (pF)
T
V = 18V
Fall Time vs. Capacitive Load
80
100
V = 12V
V = 5V
50
40
30
20
10
0
–60
–20
20
60
100
140
TA (
°
C)
D
D1
t
D2
t
Propagation Delay Time
vs. Temperature
0
100
1000
10,000
CAPACITIVE LOAD (pF)
S
Supply Current vs. Capacitive Load
84
V = 15V
C = 2200 pF
V = 18V
70
56
42
28
14
0
500 kHz
200 kHz
20 kHz
65
60
55
50
45
40
35
D
4
6
8
10
12
14
16
18
SUPPLY VOLTAGE (V)
Propagation Delay Time
vs. Supply Voltage
t
D2
t
D1
V = 12V
V = 5V
60
40
20
10
1000
10,000
CAPACITIVE LOAD (pF)
V = 18V
Rise Time vs. Capacitive Load
80
100
T
100
0
0
100
FREQUENCY (kHz)
1000
10,000
S
Supply Current vs. Frequency
10
1000
18V
10V
5V
C = 2200 pF
–60
–20
20
60
100
140
TA (
°
C)
5
7
9
11
13
15
V (V)
5
7
9
11
13
15
t
RISE
t
50
40
30
20
10
0
T
Rise and Fall Times vs. Temperature
C = 2200 pF
V = 18V
FALL
V (V)
C = 2200 pF
120
100
80
60
40
20
0
T
Rise Time vs. Supply Voltage
C = 4700 pF
C = 10,000 pF
C = 2200 pF
T
Fall Time vs. Supply Voltage
C = 4700 pF
C = 10,000 pF
100
80
60
40
20
0
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