參數(shù)資料
型號: TC4431EJA
廠商: TelCom Semiconductor, Inc.
英文描述: 1.5A HIGH-SPEED 30V MOSFET DRIVERS
中文描述: 1.5A的高速30V的MOSFET驅(qū)動器
文件頁數(shù): 2/4頁
文件大?。?/td> 61K
代理商: TC4431EJA
4-258
TELCOM SEMICONDUCTOR, INC.
1.5A HIGH-SPEED 30V MOSFET DRIVERS
TC4431
TC4431
ELECTRICAL CHARACTERISTICS:
T
A
= +25
°
C with 5.0
V
DD
30V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current (Note 1)
2.4
–1
0.8
1
V
V
μ
A
0V
V
IN
V
DD
(16V MAX)
High Output Voltage
Low Output Voltage
Output Resistance (V
OL
)
Peak Output Current
I
OUT
= 100mA
V
DD
– 1.0
0.3
V
DD
– 0.8
7
3.0
1.5
V
V
A
0.025
10
V
DD
= 30V, I
O
= 10mA
Source: V
DD
= 30V
Sink: V
DD
= 30V
Duty Cycle
2%
t
300
μ
sec
I
REV
Latch-Up Protection
Withstand Reverse Current
A
Switching Time
(Note 2)
t
R
t
F
t
D1
t
D2
Power Supply
I
S
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1
Figure 1
Figure 1
Figure 1
25
33
62
78
40
50
80
90
nsec
nsec
nsec
nsec
Power Supply Current
V
IN
= 3V
V
IN
= 0V
7
2.5
0.3
8.4
7.7
4
mA
0.4
10
V
S
V
DO
Start-up Threshold
Drop-out Threshold
V
V
(Note 3)
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ............................................................36V
Input Voltage (Note 1) ........................ V
DD
+ 0.3V to GND
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Lead Temperature (Soldering, 10 sec) .................+300
°
C
Package Thermal Resistance
CerDIP R
θ
J-A
................................................ 150
°
C/W
CerDIP R
θ
J-C
.................................................. 50
°
C/W
PDIP R
θ
J-A
................................................... 125
°
C/W
PDIP R
θ
J-C
..................................................... 42
°
C/W
SOIC R
θ
J-A
................................................... 250
°
C/W
SOIC R
θ
J-C
..................................................... 75
°
C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Operating Temperature Range
C Version...............................................0
°
C to +70
°
C
E Version ...........................................- 40
°
C to +85
°
C
Package Power Dissipation (T
A
70
°
C )
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC...............................................................470mW
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