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參數(shù)資料
| 型號(hào)： | TC4469MJD |
| 廠商： | TelCom Semiconductor, Inc. |
| 英文描述： | LOGIC-INPUT CMOS QUAD DRIVERS |
| 中文描述： | 邏輯輸入的CMOS四驅(qū)動(dòng)器 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 120K |
| 代理商： | TC4469MJD |
4-265
TELCOM SEMICONDUCTOR, INC.
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LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
Maximum operating temperature:
T
J
–
θ
JA
(P
D
) = 141
°
C,
where: T
J
= Maximum allowable junction temperature
(+150
°
C)
θ
JA
= Junction-to-ambient thermal resistance
(83.3
°
C/W) 14-pin plastic package.
NOTE:
Ambient operating temperature should not exceed +85
°
C for
"EJD" device or +125
°
C for "MJD" device.
Figure 1. Switching Time Test Circuit
VOUT
470 pF
1B
1A
2B
2A
3B
3A
4B
4A
1 μF FILM
0.1 μF CERAMIC
VDD
90%
10%
10%
10%
tD1
t
R
tD2
tF
90%
+5V
INPUT
(A, B)
VDD
OUTPUT
0V
0V
90%
1
2
3
4
5
6
8
9
7
10
11
12
13
14
Input: 100 kHz, square wave,
t
RISE
= t
FALL
≤
10nsec
Transition power dissipation arises in the
complementary configuration (TC446X) because the
output stage N-channel and P-channel MOS transistors
are ON simultaneously for a very short period when the
output changes. The transition power dissipation is
approximately:
P
T
= f V
S
(10
3
10
–9
).
Package power dissipation is the sum of load, quies-
cent and transition power dissipations. An example shows
the relative magnitude for each term:
C = 1000 pF capacitive load
V
S
= 15V
D = 50%
f
= 200 kHz
P
D
= Package Power Dissipation = P
L
+ P
Q
+ P
T
= 45 mW + 35 mW + 30 mW = 110 mW.
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