參數(shù)資料
型號： TC4627EOE
廠商： TelCom Semiconductor, Inc.
英文描述： POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
中文描述： 電源電壓的CMOS驅(qū)動器，三倍頻
文件頁數(shù)： 2/7頁
文件大?。?/td> 75K
代理商： TC4627EOE
4-272
TELCOM SEMICONDUCTOR, INC.
TC4626
TC4627
POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
ABSOLUTE MAXIMUM RATINGS
Package Power Dissipation (T
A
≤
70
°
C)
PDIP .................................................................730mW
CerDIP ..............................................................800mW
SOIC .................................................................760mW
Derating Factor
PDIP ....................................... 5.6 mW/
°
C Above 36
°
C
CerDIP ........................................................ 6.0 mW/
°
C
Supply Voltage ...........................................................6.2V
Input Voltage, Any Terminal......V
S
+ 0.3V to GND – 0.3V
Operating Temperature: M Version ......– 55
°
C to +125
°
C
E Version.........– 40
°
C to +85
°
C
C Version..............0
°
C to +70
°
C
Maximum Chip Temperature.................................+150
°
C
Storage Temperature ............................– 65
°
C to +150
°
C
Lead Temperature (10 sec)...................................+300
°
C
ELECTRICAL CHARACTERISTICS:
T
A
= 25
°
C VDD = 5V C1 = C2 = C3 10
μ
F unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Driver Input
V
IH
V
IL
I
IN
Driver Output
Logic 1, Input Voltage
Logic 0, Input Voltage
Input Current
2.4
—
– 1
—
—
—
—
0.8
1
V
V
μ
A
0V
≤
V
IN
≤
V
DRIVE
V
OH
V
OL
R
O
R
O
I
PK
Switching Time
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
V
BOOST
– 0.025
—
—
—
—
—
—
10
8
1.5
—
V
V
A
0.025
15
10
—
I
OUT
= 10 mA, V
DD
= 5V
I
OUT
= 10 mA, V
DD
= 5V
t
R
t
F
t
D1
t
D2
F
MAX
Rise Time
Fall Time
Delay Time
Delay Time
Maximum Switching Frequency
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
Test Figure 1,2
Test Figure 1
V
DD
= 5V, V
BOOST
> 8.5V
—
—
—
—
1.0
33
27
35
45
—
40
35
45
55
—
nsec
nsec
nsec
nsec
MHz
Voltage Booster
R
3
Voltage Tripler Output
Source Resistance
Voltage Doubler Output
Source Resistance
Oscillator Frequency
Oscillator Amplitude
Measured at C1-
Undervoltage Threshold
I
L
= 10 mA, V
DD
= 5V
—
300
400
R
2
—
120
200
F
OSC
V
OSC
12
4.5
—
—
28
10
kHz
V
R
LOAD
= 10k
UV
@ V
BOOST
V
START
@ V
BOOST
V
BOOST
Power Supply
7.0
7.8
8.5
V
Start Up Voltage
10.5
11.3
12
V
@V
DD
= 5V
No Load
14.6
—
—
V
I
DD
V
DD
Power Supply Current
Supply Voltage
V
IN
= LOW or HIGH
—
4.0
—
—
2.5
6.0
mA
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC4627EOE 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE 制造商:Microchip Technology Inc 功能描述:IC, MOSFET DRIVER HIGH/LOW-SIDE, SOIC-16
TC4627EOE713 功能描述:功率驅(qū)動器IC 1.5A W/Boost N-Inv RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TC4627EPA 功能描述:功率驅(qū)動器IC 1.5A W/Boost N-Inv RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TC4627MJA 功能描述:功率驅(qū)動器IC 1.5A W/Boost N-Inv RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TC47-20C6AK 制造商:Vishay Sprague 功能描述:- Bulk
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