參數(shù)資料
型號(hào)： TC54VN4302EZBSTP
廠商： TelCom Semiconductor, Inc.
英文描述： Power MOSFET and Schottky Diode 20 V, 4.6 A, °Cool™ N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package; Package: WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
中文描述： 電壓檢測(cè)器
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 50K
代理商： TC54VN4302EZBSTP
4-280
TELCOM SEMICONDUCTOR, INC.
TC54
VOLTAGE DETECTOR
ELECTRICAL CHARACTERISTICS:
T
A
= 25
°
C, unless otherwise specified.
Symbol
Parameter
Test Conditions
V
–
V
IN
=
2.1V
3.0V
4.0V
5.0V
Min
Typ
Max
Unit
V
IN
I
SS
Operating Voltage
Quiescent Current
DET
= 2.1 to 6.0V
1.5
10.0
3.0
3.4
3.8
4.2
(V
–
x 1.02
(V
–
x 0.08
V
1.0
1.3
1.6
2.0
μ
A
V
–
Threshold Voltage
(V
–
x 0.98
(V
–
x 0.02
DET
)
DET
)
V
V
HYST
Hysteresis Range
DET
)
(V
–
x 0.05
7.7
10.1
11.5
13.0
DET
)
DET
)
V
I
OUT
Output Current
Nch V
DS
= 0.5
V
IN
= 2.1V
mA
3.0V
4.0V
5.0V
Pch V
DS
= 2.1V
– 40
°
C
≤
T
A
≤
85
°
C
V
IN
= 8.0V
– 10.0
±
100 ppm/
°
C
T
C
(V
–
)
Tempco of (V
–
)
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage (V
IN).....................................................................
12V
Output Voltage: CMOS ............ (V
SS
– 0.3) to (V
IN
+ 0.3)
Open Drain................. (V
SS
– 0.3) to 12V
Output Current .........................................................50mA
Power Dissipation: (T
A
≤
70
°
C)
SOT-23A-3 .....................................................240mW
SOT-89-3 .......................................................400mW
TO-92
.......................................................440mW
Operating Temperature..........................– 40
°
C to + 85
°
C
Storage Temperature ...........................– 65
°
C to + 150
°
C
Soldering Temperature ...................... 300
°
C, 10 seconds
* Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
Pin No.
Symbol
Description
1
2
V
IN
V
OUT
Analog input. This pin is both the power supply input and the voltage to be monitored.
Digital output. This output goes low when V
IN
drops below V
high when V
IN
rises above V
–
Ground terminal.
–
and returns
DET
+ V
HYST
. (See timing chart).
3
V
SS
PIN DESCRIPTION
相關(guān)PDF資料
PDF描述
TC54VN4401ECB Power MOSFET and Schottky Diode 20 V, 4.6 A, °Cool™ N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package; Package: WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
TC54VN4401ECBSTP VOLTAGE DETECTOR
TC54VN4401EMB VOLTAGE DETECTOR
TC54VN4401EMBSTP Power MOSFET -20 V, -9.5 A, µCool™ Single P-Channel 2x2 mm WDFN Package; Package: WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
TC54VN4401EZB Power MOSFET 30 V, 7.8 A, °Cool™ Single N-Channel, 2x2 mm WDFN Package; Package: WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC54VN4401ECB 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:VOLTAGE DETECTOR
TC54VN4401ECBRTP 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:VOLTAGE DETECTOR
TC54VN4401ECBSTP 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:VOLTAGE DETECTOR
TC54VN4401EMB 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:VOLTAGE DETECTOR
TC54VN4401EMBRTP 制造商:TELCOM 制造商全稱:TelCom Semiconductor, Inc 功能描述:VOLTAGE DETECTOR
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