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參數(shù)資料
| 型號(hào)： | TC55VZM216AFTN12 |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 CACHE SRAM, 12 ns, PDSO44 |
| 封裝： | 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | TC55VZM216AFTN12 |
TC55VZM216AJJN/AFTN08,10,12
2003-01-17
1/11
Single power supply voltage of 3.3 V ± 0.3 V
Fully static operation
All inputs and outputs are LVTTL compatible
Output buffer control using OE
Data byte control using LB (I/O1 to I/O8) and
UB (I/O9 to I/O16)
Package:
SOJ44-P-400-1.27 (AJJN)
(Weight: 1.64 g typ)
TSOP II44-P-400-0.80 (AFTN) (Weight: 0.45 g typ)
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT CMOS STATIC RAM
DESCRIPTION
The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as
262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a
low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide
lower and upper byte access. This device is well suited to cache memory applications where high-speed access and
high-speed storage
are
required.
All
inputs
and outputs
are
directly LVTTL compatible.
The
TC55VZM216AJJN/AFTN is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface
assembly.
FEATURES
Fast access time (the following are maximum values)
TC55VZM216AJJN/AFTN08:8 ns
TC55VZM216AJJN/AFTN10:10 ns
TC55VZM216AJJN/AFTN12:12 ns
Low-power dissipation (IDDO2)
(the following are maximum values)
Cycle Time
8
10
12
ns
Operation (max)
140
130
120
mA
Standby:4 mA (both devices)
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
44 PIN SOJ
44 PIN TSOP
A0 to A17
Address Inputs
I/O1 to I/O16
Data Inputs/Outputs
CE
Chip Enable Input
WE
Write Enable Input
OE
Output Enable Input
LB
, UB
Data Byte Control Inputs
VDD
Power (
+3.3 V)
GND
Ground
NU
Not Usable (Input)
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
I/O4
VDD
GND
I/O5
I/O6
I/O7
I/O8
A15
A14
A13
A12
A16
A5
A6
A7
I/O16
I/O15
I/O14
I/O13
GND
VDD
I/O12
I/O11
I/O10
I/O9
NU
A8
A9
A10
A11
A17
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
36
10
35
11
34
12
33
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
21
24
22
23
CE
OE
UB
LB
WE
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
36
10
35
11
34
12
33
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
21
24
22
23
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
I/O4
VDD
GND
I/O5
I/O6
I/O7
I/O8
A15
A14
A13
A12
A16
A5
A6
A7
I/O16
I/O15
I/O14
I/O13
GND
VDD
I/O12
I/O11
I/O10
I/O9
NU
A8
A9
A10
A11
A17
OE
UB
LB
CE
WE
(TC55VZM216AJJN)
(TC55VZM216AFTN)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC55VZM216AFTN-12 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN08 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN-08 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN-10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:262,144-WORD BY 16-BIT CMOS STATIC RAM |
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