參數(shù)資料
型號: TC7MH161FK
廠商: Toshiba Corporation
英文描述: TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
中文描述: 東芝的CMOS數(shù)字集成電路硅單片
文件頁數(shù): 5/12頁
文件大?。?/td> 193K
代理商: TC7MH161FK
TC7MH161,163FK
2001-09-12
5
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
V
CC
V
IN
0.5~7.0
V
DC input voltage
0.5~7.0
V
DC output voltage
V
OUT
0.5~V
CC
0.5
V
Input diode current
I
IK
20
mA
Output diode current
I
OK
20
mA
DC output current
I
OUT
25
mA
DC V
CC
/ground current
I
CC
50
mA
Power dissipation
P
D
180
mW
Storage temperature
T
stg
65~150
°C
Recommended Operating Conditions
Characteristics
Symbol
Rating
Unit
Supply voltage
V
CC
V
IN
2.0~5.5
V
Input voltage
0~5.5
V
Output voltage
V
OUT
0~V
CC
V
Operating temperature
T
opr
40~85
°C
0~100 (V
CC
3.3 0.3 V)
Input rise and fall time
dt/dv
0~20 (V
CC
5 0.5 V)
ns/V
Electrical Characteristics
DC Characteristics
Ta 25°C
Ta 40~85°C
Characteristics
Symbol
Test Condition
V
CC
(V)
Min
Typ.
Max
Min
Max
Unit
2.0
1.50
1.50
High level
V
IH
3.0~5.5
V
CC
0.7
V
CC
0.7
2.0
0.50
0.50
Input voltage
Low level
V
IL
3.0~5.5
V
CC
0.3
V
CC
0.3
V
2.0
1.9
2.0
1.9
3.0
2.9
3.0
2.9
I
OH
50 A
4.5
4.4
4.5
4.4
I
OH
4 mA
3.0
2.58
2.48
High level
V
OH
V
IN
V
IH
or V
IL
I
OH
8 mA
4.5
3.94
3.80
2.0
0
0.1
0.1
3.0
0
0.1
0.1
I
OL
50 A
4.5
0
0.1
0.1
I
OL
4 mA
3.0
0.36
0.44
Output
voltage
Low level
V
OL
V
IN
V
IH
or V
IL
I
OL
8 mA
4.5
0.36
0.44
V
Input leakage current
I
IN
V
IN
5.5 V or GND
0~5.5
0.1
1.0
A
Quiescent supply current
I
CC
V
IN
V
CC
or GND
5.5
4.0
40.0
A
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