參數(shù)資料
型號: TC7SZ14F
廠商: Toshiba Corporation
英文描述: TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
中文描述: 東芝的CMOS數(shù)字集成電路硅單片
文件頁數(shù): 3/6頁
文件大小: 131K
代理商: TC7SZ14F
TC7SZ14F/FU
2002-04-01
3
Ta 25°C
Typ.
Ta 40~85°C
Min
Characteristics
Symbol
Test Condition
V
CC
(V)
1.65
Min
Max
Max
Unit
1.55
1.65
1.55
1.8
1.7
1.8
1.7
2.3
2.2
2.3
2.2
3.0
2.9
3.0
2.9
I
OH
100 A
4.5
4.4
4.5
4.4
I
OH
4 mA
1.65
1.29
1.52
1.29
I
OH
8 mA
2.3
1.9
2.15
1.9
I
OH
16 mA
3.0
2.4
2.8
2.4
I
OH
24 mA
3.0
2.3
2.68
2.3
High-level output voltage
V
OH
V
IN
V
IL
I
OH
32 mA
4.5
3.8
4.2
3.8
1.65
0
0.1
0.1
1.8
0
0.1
0.1
2.3
0
0.1
0.1
3.0
0
0.1
0.1
I
OL
100 A
4.5
0
0.1
0.1
I
OL
4 mA
1.65
0.08
0.24
0.24
I
OL
8 mA
2.3
0.1
0.3
0.3
I
OL
16 mA
3.0
0.15
0.4
0.4
I
OL
24 mA
3.0
0.22
0.55
0.55
Low-level output voltage
V
OL
V
IN
V
IH
I
OL
32 mA
4.5
0.22
0.55
0.55
V
Input leakage current
I
IN
V
IN
5.5 V or GND
0~5.5
1
10
A
Power OFF leakage
current
I
OFF
V
IN
or V
OUT
5.5 V
0.0
1
10
A
Quiescent supply current
I
CC
V
IN
5.5 V or GND
1.65~5.5
1
10
A
AC Electrical Characteristics
(Unless otherwise specified Input: t
r
t
f
3 ns)
Ta 25°C
Typ.
Ta 40~85°C
Min
Characteristics
Symbol
Test Condition
V
CC
(V)
Min
Max
Max
Unit
1.65
2.0
9.1
15.0
2.0
15.6
1.8
2.0
7.6
12.5
2.0
13
2.5 0.2
1.0
5.0
9.0
1.0
9.5
3.3 0.3
1.0
3.7
6.3
1.0
6.5
C
L
15 pF,
R
L
1 M
5.0 0.5
0.5
3.1
5.2
0.5
5.5
3.3 0.3
1.5
4.4
7.2
1.5
7.5
Propagation delay time
t
pLH
t
pHL
C
L
50 pF,
R
L
500
5.0 0.5
0.5
3.7
5.9
0.8
6.2
ns
Input capacitance
C
IN
pF
Power dissipation capacitance
C
PD
(Note 4)
pF
Note 4: CPD is defined as the value of the internal equivalent capacitance which is Calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation.
I
CC
(opr)
C
PD
V
CC
f
IN
I
CC
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TC7SZ14FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
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