參數(shù)資料
型號(hào)： TC96C55
廠商： TelCom Semiconductor, Inc.
英文描述： 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR
中文描述： 3A輸出可編程功耗振蕩器
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 106K
代理商： TC96C55
4-160
TELCOM SEMICONDUCTOR, INC.
ELECTRICAL CHARACTERISTICS:
unless otherwise specified T
A
= +25
°
C with 10V
≤
V
DD
≤
18V:
Symbol
Oscillator
Parameter
Test Condition
Min
Typ
Max
Unit
Voltage Stability
Temperature Stability
V
DD
= 7 to 18V
– 55
≤
Temp
≤
125
°
C
–
–
1
5
–
%/V
%/
°
C
0.4
Power Supply
Power Supply Current
I
DD
0
≤
V
IN
≤
3V
–
2
3
mA
Switching Time
1
t
R
t
F
t
D1
t
D2
Output
V
OH
V
OL
R
O
R
O
I
PK
Rise Time
Fall Time
Delay Time
Delay Time
C1 = 1800pF
C1 = 1800pF
C1 = 1800pF
C1 = 1800pF
–
–
–
–
23
20
140
100
30
30
180
140
nsec
nsec
nsec
nsec
High Output Voltage
Low Output Voltage
Output Res Hi State
Output Res Lo State
Peak Output Current
V
DD
– 0.025
–
–
–
–
–
–
–
V
V
A
0.025
5
5
–
V
DD
= 15V
V
DD
= 15V
V
DD
= 18V
3.5
2.5
3
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +20V
Input Voltage, Pin 1 or 4.................V
DD
+0.3 to GND –0.3
Maximum Chip Temperature.................................+150
°
C
Storage Temperature Range ................– 65
°
C to +150
°
C
Package Thermal Resistance
CerDIP R
Θ
J-A................................................................
150
°
C/W
CerDIP R
Θ
J-C...................................................................
50
°
C/W
PDIP R
Θ
J-A....................................................................
125
°
C/W
PDIP R
Θ
J-C.......................................................................
42
°
C/W
ELECTRICAL CHARACTERISTICS:
unless otherwise specified T
A
= +25
°
C with 5V
≤
V
DD
≤
18V.
SOIC R
Θ
J-A....................................................................
155
°
C/W
SOIC R
Θ
J-C.......................................................................
45
°
C/W
Operating Temperature Range
C Version ...............................................0
°
C to +70
°
C
E Version ..........................................– 40
°
C to +85
°
C
M Version .......................................– 55
°
C to +125
°
C
Package Power Dissipation (T
A
≤
70
°
C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
Programmable Current Range
Pin 4 Input Current for I
SOURCE
Control
Pin 1 Input Current for
I
SINK
Control
(V
REF
- V
R1
) / R
CHG
Fig. 2
(V
REF
- V
R2
) / R
DIS
Fig. 2
5.0
5.0
—
—
150
150
μ
A
μ
A
Reference Section
V
REF
Line Regulation of V
REF
Load Regulation of V
REF
V
REF
Drift Over Lifetime
V
REF
Tempco
Voltage at Pin 1 & 4
Voltage Across R
CHG
and R
DIS
Pin 2, High Switching Threshold
Pin 2, Low Switching Threshold
Delta High to Low Threshold
V
REF
Pin 3 Short to GND Pin 5
V
DD
= 15V, I
REF
= 10
μ
A
V
DD
= 7V to 18V
I
REF
= 0 to 1mA
3.8
—
—
—
—
2.85
0.85
1.8
0.8
0.9
—
4
4.2
1
0.2
5
2000
3.15
1.15
2.2
1.2
1.1
15
V
0.6
0.1
—
1100
3.0
1
2
1
1.0
8
%/V
%/mA
%
ppm/
°
C
V
V
V
V
V
mA
V
DRIFT
TCV
REF
V
R1,
V
R2
V
REF
- V
R
V
ih
V
il
V
ih
- V
il
I
REF
– 55
≤
Temp
≤
125
°
C
V
DD
= 15V
V
DD
= 15V
V
DD
= 15V
V
DD
= 15V
TC96C555
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
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