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參數(shù)資料
| 型號： | TCDT1123G |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-6 |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR>100-200% |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 154K |
| 代理商： | TCDT1123G |
www.vishay.com
790
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83532
Rev. 1.7, 28-Oct-09
TCDT1120, TCDT1120G
Vishay Semiconductors
Optocoupler, Phototransistor Output
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices (DIP).
Note
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
(2)
TEST CONDITION
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
T
j
5
V
60
3
100
125
mA
A
mW
°C
t
p
≤
10 μs
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
70
7
50
100
150
125
V
V
mA
mA
mW
°C
t
p
/T = 0.5, t
p
≤
10 ms
t = 1 s
V
ISO
P
tot
T
amb
T
stg
T
sld
5000
250
V
RMS
mW
°C
°C
°C
- 55 to + 100
- 55 to + 125
260
2 mm from case, t
≤
10 s
ELECTRICAL CHARACTERISTCS
(1)
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector ermitter cut-off current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 50 mA
V
R
= 0 V, f = 1 MHz
V
F
C
j
1.25
50
1.6
V
pF
I
C
= 100
μ
A
I
C
= 1 mA
I
E
= 100 μA
V
CE
= 20 V, I
F
= 0 A
V
CBO
V
CEO
V
ECO
I
CEO
90
90
7
V
V
V
nA
150
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA, R
L
= 100
Ω
f = 1 MHz
V
CEsat
f
c
C
k
0.3
V
110
0.3
kHz
pF
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