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參數(shù)資料
| 型號： | TCET1201 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, PLASTIC, DIP-4 |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR 40-80% |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 141K |
| 代理商： | TCET1201 |
Document Number: 83501
Rev. 1.7, 02-Nov-10
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
3
TCET1200, TCET1200G
Optocoupler, Phototransistor Output
Vishay Semiconductors
Note
According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test acc. to
DIN EN 60747-5-2; IEC60747-5-5
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
TCET1200
TCET1200G
TCET1201
TCET1201G
TCET1202
TCET1202G
TCET1203
TCET1203G
TCET1204
TCET1204G
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
TYP.
MAX.
UNIT
%
%
%
%
%
%
%
%
%
%
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
50
600
V
CE
= 5 V, I
F
= 10 mA
40
80
63
125
100
200
160
320
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
100 %, t
test
= 1 s
V
pd
1.6
kV
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IO
= 500 V
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
= 150 °C
(construction test only)
V
pd
1.36
kV
Insulation resistance
R
IO
R
IO
10
12
10
11
Ω
Ω
R
IO
10
9
Ω
Rated impulse voltage
Max. working voltages
Forward current
Power dissipation
Safety temperature
Creepage distance
V
IOTM
V
IORM
I
F
P
diss
T
si
6
kV
V
mA
mW
°C
mm
Recurring peak voltage
850
130
265
150
7.6
0
25
50
75
125
0
50
100
150
200
300
P
t
T
si
- Safety Temperature (°C)
150
94 9182
100
250
Phototransistor
P
si
(mW)
IR-diode
I
si
(mA)
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TCET1201G | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 40-80% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1201G1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler with Phototransistor Output |
| TCET1202 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1202G | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| TCET1202G1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler with Phototransistor Output |
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