參數(shù)資料
型號(hào)： TCET4100G
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： COUP.ISOL.STD 4-CHANNEL DIL16 - Rail/Tube
中文描述： Transistor Output Optocouplers Phototransistor Out Quad CTR > 50-600%
文件頁數(shù)： 2/8頁
文件大?。?/td> 136K
代理商： TCET4100G
www.vishay.com
2
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83727
Rev. 1.5, 07-Oct-10
TCET2100, TCET4100
Vishay Semiconductors
Optocoupler, Phototransistor Output,
(Dual, Quad Channel)
Notes
(1)
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Isolation voltage
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
(2)
TEST CONDITION
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
T
j
6
V
60
1.5
100
125
mA
A
mW
°C
t
p
≤
10 μs
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
70
7
50
100
150
125
V
V
mA
mA
mW
°C
t
p
/T = 0.5, t
p
≤
10 ms
t = 1 s
V
ISO
V
IORM
P
tot
T
amb
T
stg
T
sld
5300
890
250
V
RMS
V
P
mW
°C
°C
°C
- 55 to + 100
- 55 to + 150
260
2 mm from case, t
≤
10 s
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= ± 50 mA
Junction capacitance
V
R
= 0 V, f = 1 MHz
OUTPUT
Collector emitter voltage
I
C
= 1 mA
Emitter collector voltage
I
E
= 100 μA
Collector emitter cut-off current
V
CE
= 20 V, I
F
= 0, E = 0
COUPLER
Collector emitter saturation voltage
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
Ω
Coupling capacitance
f = 1 MHz
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
C
j
1.25
50
1.6
V
pF
V
CEO
V
ECO
I
CEO
70
7
V
V
nA
10
100
V
CEsat
0.3
V
Cut-off frequency
f
c
110
kHz
C
k
0.3
pF
CURRENT TRANSFER RATIO
PARAMETER
I
C
/I
F
TEST CONDITION
V
CE
= 5 V, I
F
= 5 mA
SYMBOL
CTR
MIN.
50
TYP.
MAX.
600
UNIT
%
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