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參數(shù)資料
| 型號： | TCFGA0G106M8R |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Chip tantalum capacitors with open-function built-in |
| 中文描述： | 以開放式功能的內(nèi)置芯片鉭電容器中 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 139K |
| 代理商： | TCFGA0G106M8R |
TCFG series
Tantalum capacitors
11/15
(3) Derating voltage as function of temperature
50
60
70
80
90
100
75
85
95
105
115
125
TEMPERATURE
(
°C)
Fig.5
PERCENT
OF
85
°C
RVDC1
(V
R
)
85
°C
125
°C
Rated Voltage
4
6.3
10
16
20
5.2
8
13
20
26
2.5
4
6.3
10
13
3.4
5
9
12
16
Surge Voltage
Category Voltage
Surge Voltage
(V.DC)
(4) Reliability
The malfunction rate of tantalum solid state electrolytic capacitors varies considerably depending on the conditions of
usage (ambient temperature, applied voltage, circuit resistance).
Formula for calculating malfunction rate
λp = λb × (πE × πSR × πQ × πCV)
λp : Malfunction rate stemming from operation
λb : Basic malfunction rate
πE : Environmental factors
πSR : Series resistance
πQ : Level of malfunction rate
πCV : Capacitance
For details on how to calculate the malfunction rate stemming from operation, see the tantalum solid state electrolytic
capacitors column in MIL-HDBK-217.
Malfunction rate as function of operating
Malfunction rate as function of circuit resistance (
/V)
temperature and rated voltage
0.01
0.02
0.03
0.06
0.1
0.2
0.3
0.5
1.0
Ratio =
Rated Voltage
Applied Voltage
1.0
0.7
0.5
0.3
0.1
20
40
60
85
OPERATING TEMPERATURE
(
°C)
Fig.6
FAILURE
RATE
COEFFICIENT
0.4
0.6
0.8
1.0
2.0
4.0
6.0
0.1
0.2
0.6
0.4
3.0
1.0
2.0
RESISTANCE OF CIRCUIT
(
/ V)
Fig.7
RESISTANCE
COEFFICIENT
(
π
)
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