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參數(shù)資料
| 型號(hào)： | TCLT1007 |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 光電耦合器 |
| 英文描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, GREEN, MINIFLAT, SMD, SOP-4 |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | TCLT1007 |
TCLT100. Series
Vishay Semiconductors
www.vishay.com
Rev. 2.4, 29-Apr-11
2
Document Number: 83515
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
t
p
/T = 0.5, t
p
10 ms
Power dissipation
Junction temperature
COUPLER
Isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
T
j
6
V
60
1.5
100
125
mA
A
mW
°C
t
p
10 μs
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
70
7
50
100
150
125
V
V
mA
mA
mW
°C
V
ISO
P
tot
T
amb
T
stg
T
sld
5000
250
V
RMS
mW
°C
°C
°C
- 55 to + 100
- 55 to + 125
260
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Forward voltage
I
F
= 50 mA
Junction capacitance
V
R
= 0 V, f = 1 MHz
OUTPUT
Collector emitter voltage
I
C
= 1 mA
Emitter collector voltage
I
E
= 100 μA
Collector emitter cut-off current
V
CE
= 20 V, I
F
= 0 A
COUPLER
Collector emitter saturation voltage
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
= 10 mA,
R
L
= 100
Coupling capacitance
f = 1 MHz
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
F
C
j
1.25
50
1.6
V
pF
V
CEO
V
ECO
I
CEO
70
7
V
V
nA
10
100
V
CEsat
0.3
V
Cut-off frequency
f
c
110
kHz
C
k
0.3
pF
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